Related papers: Correlation-Driven Charge Order at a Mott Insulato…
A 3D layered system of charges with logarithmic interaction parallel to the layers and random dipoles is studied via a novel variational method and an energy rationale which reproduce the known phase diagram for a single layer. Increasing…
We address how the nature of linearly dispersing edge states of two dimensional (2D) topological insulators evolves with increasing electron-electron correlation engendered by a Hubbard like on-site repulsion $U$ in finite ribbons of two…
We use resonant soft x-ray scattering to study electronic reconstruction at the interface between the Mott insulator LaMnO3 and the "band" insulator SrMnO3. Superlattices of these two insulators were shown previously to have both…
By combined top- and backgating, we explore the correlation of superconductivity with band filling and electron confinement at the LaAlO$_3$-SrTiO$_3$ interface. We find that the top- and backgate voltages have distinctly different effects…
We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can…
In oxide heterostructures, different materials are integrated into a single artificial crystal, resulting in a breaking of inversion-symmetry across the heterointerfaces. A notable example is the interface between polar and non-polar…
We investigated \LAO\ - \STO\ heterointerfaces grown either in oxygen rich or poor atmosphere by soft x-ray spectroscopy. Resonant photoemission across the Ti L$_{2,3}$ absorption edge of the valence band and Ti 2p core level spectroscopy…
We construct and apply an exchange-correlation functional for the one-dimensional Hubbard model. This functional has built into it the Luttinger-liquid and Mott-insulator correlations, present in the Hubbard model, in the same way in which…
Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results in a plethora of fascinating properties, which can be exploited in new generations of electronic devices with enhanced functionalities. The…
The doping induced insulator-metal transition in $La_{1-x}Sr_{x}TiO_{3}$ is studied using the ab-initio LDA+DMFT method. Combining the LDA bandstructure for the actual, distorted structure found recently with multi-orbital DMFT to treat…
Based on ab initio calculations, we demonstrate that a Mott insulator LaTiO$_3$ (LTO), not inspected previously as an altermagnetic material, shows the characteristic features of altermagnets, i.e., (i) fully compensated antiferromagnetism…
We investigate the effect of spatial doping of the Mott insulator LaVO$_3$ by inserting a few layers of the correlated metal SrVO$_3$ in multilayer geometries. Using density functional theory in combination with dynamical mean-field theory,…
We study the third-order nonlinear optical susceptibility $\chi^{(3)}$ and photoexcited states of two-dimensional (2D) Mott insulators by using an effective model in the strong-coupling limit of a half-filled Hubbard model. In the…
We explore multiband effects on d-wave superconducting instabilities driven by electron-electron interactions. Our models on the two-dimensional square lattice consist of a main band with an extended Fermi surface and predominant weight…
Motivated by the recent progress in realizing and controlling extended Bose-Hubbard systems using excitonic or atomic devices, the present Letter theoretically investigates the case of a two-band Bose-Hubbard chain with nearest-neighbor…
A series of epitaxial (LaVO3)6m(SrVO3)m superlattices having the same nominal composition as La6/7Sr1/7VO3, a Mott-Hubbard insulator, were grown with pulsed-laser deposition on [001]-oriented SrTiO3 substrates, and their superlattice period…
We study the quantum phase transition between a band (``ionic'') insulator and a Mott-Hubbard insulator, realized at a critical value U=Uc in a bipartite Hubbard model with two inequivalent sites, whose on-site energies differ by an offset…
Unconventional phases often occur where two competing mechanisms compensate. An excellent example is the ionic Hubbard model where the alternating local potential $\delta$, favoring a band insulator (BI), competes with the local repulsion…
We studied LaAlO3/SrTiO3 interfaces for varying LaAlO3 thickness by core-level photoemission spectroscopy. In Ti 2p spectra for conducting "n-type" interfaces, Ti3+ signals appeared, which were absent for insulating "p-type" interfaces. The…
Recently a highly ordered Moir\'e dislocation lattice was identified at the interface between a \ce{SrTiO3} (STO) thin film and the (LaAlO$_3$)$_{0.3}$(Sr$_2$TaAlO$_6$)$_{0.7}$ (LSAT) substrate. A fundamental understanding of the local…