Related papers: Hole-driven MIT theory, Mott transition in VO_2, M…
The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…
It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…
We analyze the highly non-perturbative regime surrounding the Mott-Hubbard metal-to-insulator transition (MIT) by means of dynamical mean field theory calculations at the two-particle level. By extending the results of Sch\"afer, et al.…
Strong electron-electron interaction can induce Mott insulating state, which is believed to host unusual correlated phenomena such as quantum spin liquid when quantum fluctuation dominates and unconventional superconductivity through…
The metal-insulator transition (MIT) observed in two-dimensional (2D) systems is apparently contradictory to the well known scaling theory of localization. By investigating the conductance of disordered one-dimensional systems with a finite…
Numerical studies on Mott transitions caused by the control of the ratio between bandwidth and electron-electron interaction ($U$) are reported. By using the recently proposed path-integral renormalization group(PIRG) algorithm, physical…
By comparing the responses to an in-plane magnetic field near the metal-insulator transition (MIT), we find that the observed MIT in Si MOSFETs can be described by the non-perturbative Mott-Hubbard scenario. Interrelations between…
We present {\it ab initio} LDA+DMFT results for the many-particle density of states of $VO_{2}$ on the metallic side of the strongly first-order ($T$-driven) insulator-metal transition. In strong contrast to LDA predictions, there is {\it…
Thermodynamic and dynamical properties of filling-control metal-insulator transition (MIT) in the Hubbard model are studied by the operator projection method, especially in two dimensions. This is a non-perturbative analytic approach to…
We investigate a quarter-filled two-band Hubbard model involving a crystal-field splitting, which lifts the orbital degeneracy as well as an inter-orbital hopping (inter-band hybridization). Both terms are relevant to the realistic…
In addition to Anderson and Mott localization, intrinsic phase separation has long been advocated as the third fundamental mechanism controlling the doping-driven metal-insulator transitions. In electronic system, where charge neutrality…
The electrodynamics near the metal-to-insulator transitions (MIT) induced, in V3O5 single crystals, by both temperature (T) and pressure (P) has been studied by infrared spectroscopy. The T- and P-dependence of the optical conductivity may…
An abrupt metal-insulator transition (MIT) was observed in VO2 thin films during the application of a switching voltage pulse to two-terminal devices. Any switching pulse over a threshold voltage for the MIT of 7.1 V enabled the device…
Layered doped Mott insulators, such as the cuprates, show unusual temperature dependence of the resistivity. Intriguingly, the resistivity perpendicular to the CuO$_2$ planes, $\rho_c(T)$, shows both metallic ($d\rho_c/dT > 0$) and…
Metal-insulator transition underlies many remarkable and technologically important phenomena in VO2. Even though its monoclinic structure had before been the reserve of the insulating state, recent experiments have observed an unexpected…
We report on a metal-insulator transition (MIT) that is observed in an electron system at the SmTiO3/SrTiO3 interface. This MIT is characterized by an abrupt transition at a critical temperature, below which the resistance changes by more…
We explore the superconducting properties of the bilayer Hubbard model, which exhibits a high transition temperature ($T_{\rm c}$) for an $s_{\pm}$ pairing, using a cluster extension of the dynamical mean-field theory. Unlike the…
We calculate the optical and DC conductivity for half-filled disordered Hubbard model near the Mott metal-insulator transition. As in the clean case, large metallic resistivity is driven by a strong inelastic scattering, and Drude-like peak…
We study the Mott metal-insulator transition in the two-band Hubbard model with different hopping amplitudes $t_1$ and $t_2$ for the two orbitals on the two-dimensional square lattice by using {\it non-magnetic} variational wave functions,…
The metal-insulator transition (MIT) is an exceptional test bed for studying strong electron correlations in two dimensions in the presence of disorder. In the present study, it is found that in contrast to previous experiments on…