Related papers: Scanned gate microscopy of a one-dimensional quant…
We show that scanning gate microscopy can be used for probing electron-electron interactions inside a nanostructure. We assume a simple model made of two non-interacting strips attached to an interacting nanosystem. In one of the strips,…
We compare classical versus quantum electron transport in recently investigated magnetic focusing devices [S. Bhandari et al., Nano Lett. 16, 1690 (2016)] exposed to the perturbing potential of a scanning gate microscope (SGM). Using the…
Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and…
We analyze electron paths in a solid-state double-slit interferometer based on the two-dimensional electron gas and their mapping by the scanning gate microscopy (SGM). A device with a quantum point source contact of a split exit and a…
We perform scanning gate microscopy on individual suspended carbon nanotube quantum dots. The size and position of the quantum dots can be visually identified from the concentric high conductance rings. For the ultra clean devices used in…
Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at…
We propose an analytical formulation for the Scanning Gate Microscopy (SGM) response to local tips with arbitrary strength in two terminal nano-structures. The real space resolved conductance is expressed in terms of the unperturbed…
We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists…
We image equilibrium and non-equilibrium transport through a two-dimensional electronic cavity using scanning gate microscopy (SGM). Injecting electrons into the cavity through a quantum point contact close to equilibrium, we raster-scan a…
We use impedance spectroscopy to measure the high frequency properties of single-walled carbon nanotube field effect transistors (swCN-FETs). Furthermore, we extend Scanning Gate Microscopy (SGM) to frequencies up to 15MHz, and use it to…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at…
Scanning Surface Potential Microscopy (SSPM) is one of the most widely used techniques for the characterization of electrical properties at small dimensions. Applicability of SSPM and related electrostatic scanning probe microscopies for…
We theoretically study scanning gate microscopy (SGM) of electron and hole trajectories in a quantum point contact (QPC) embedded in a normal-superconductor (NS) junction. At zero voltage bias, the electrons and holes transported through…
Research in semiconductor physics has advanced to the study of two-dimensional (2D) materials where the surface controls electronic transport. A scanning probe microscope (SPM) is an ideal tool to image electronic motion in these devices by…
We show an electron interferometer between a quantum point contact (QPC) and a scanning gate microscope (SGM) tip in a two-dimensional electron gas. The QPC and SGM tip act as reflective barriers of a lossy cavity; the conductance through…
Electrostatic forces are among the most common interactions in nature and omnipresent at the nanoscale. Scanning probe methods represent a formidable approach to study these interactions locally. The lateral resolution of such images is,…
We study scanning gate microscopy (SGM) conductance mapping of a $\mathrm{MoS}_2$ zigzag ribbon exploiting tight-binding and continuum models. We show that, even though the edge modes of a pristine nanoribbon are robust to backscattering on…
Nanoscale optoelectronic components achieve functionality via spatial variation in electronic structure induced by composition, defects, and dopants. To dynamically change the local band alignment and influence defect states, a scanning…
We use conducting-tip atomic force microscopy (AFM) to measure local electronic properties of single wall carbon nanotube (SWNT) circuits on insulating substrates. When a voltage is applied to the tip and AFM feedback is used to position…
This article reports on tunable electron backscattering investigated with the biased tip of a scanning force microscope. Using a channel defined by a pair of Schottky gates, the branched electron flow of ballistic electrons injected from a…