Related papers: Electron-Dephasing Time in A Two-Dimensional Spin-…
The beating pattern of Shubnikov-de Haas oscillations in 2D electron system in the presence of a Rashba zero-field spin splitting is reproduced. It is shown, taking into account the Zeeman splitting, that the explicit formulae for the node…
Understanding the spin dephasing mechanism is of fundamental importance in all potential applications of the spin qubit. Here we demonstrate a spin dephasing mechanism in semiconductor quantum dot due to the $1/f$ charge noise. The…
We consider a two-dimensional electron gas (2DEG) with the Rashba spin-orbit interaction (SOI) in presence of a perpendicular magnetic field. We derive analytical expressions of the density of states (DOS) of a 2DEG with the Rashba SOI in…
The spin relaxation of a two-dimensional electron system (2DES) formed in a symmetric quantum well is studied theoretically when the quantum well is parallel to the (110) plane of the zinc-blende structure, the spin polarization is…
We use charge sensing of Pauli blockade (including spin and isospin) in a two-electron 13C nanotube double quantum dot to measure relaxation and dephasing times. The relaxation time, T1, first decreases with parallel magnetic field then…
The spin dephasing due to the Rashba spin-orbit coupling, especially its dependence on the direction of the electric field is studied in InAs quantum wire. We find that the spin dephasing is strongly affected by the angle of Rashba…
The effect of in-plane electric field on Landau level spacing, spin splitting energy, average spin polarization and average spin current in the bulk as well as at the edges of a two-dimensional electron system with Rashba spin-orbit…
Time-resolved optical measurements of electron spin dynamics in modulation doped InGaAs quantum wells are used to explore electron spin coherence times and spin precession frequencies in a regime where an out of plane magnetic field…
We study the tunability of the spin-orbit interaction in a two-dimensional electron gas with a front and a back gate electrode by monitoring the spin precession frequency of drifting electrons using time-resolved Kerr rotation. The Rashba…
Studies of weak localization by scattering from vapor atoms for electrons on a liquid helium surface are reported. There are three contributions to the dephasing time. Dephasing by the motion of vapor atoms perpendicular to the surface is…
We report magnetotransport measurements of two-dimensional holes in open quantum dots, patterned either as a single-dot or an array of dots, on a GaAs quantum well. For temperatures $T$ below 500 mK, we observe signatures of coherent…
Spin dephasing via the spin-orbit interaction (SOI) is a major mechanism limiting the electron spin lifetime in III-V zincblende quantum wells. The dephasing can be suppressed in GaAs(111) quantum wells by applying an electric field. The…
Spin-orbit interaction (SOI) in low-dimensional systems results in the fascinating property of spin-momentum locking. In a Rashba system the inversion symmetry normal to the plane of a two-dimensional (2D) electron gas is broken, generating…
The transport properties of a magnetic two dimensional electron gas consisting of a modulation doped n type HgMnTe/HgCdTe quantum well, QW, have been investigated. By analyzing the Shubnikov-de Haas oscillations and the node positions of…
We study the local equilibrium properties of two-dimensional electron gases at high magnetic fields in the presence of random smooth electrostatic disorder, Rashba spin-orbit coupling, and the Zeeman interaction. Using a systematic magnetic…
We analyze the unitary time evolution of a conduction electron, described by a two-level system, interacting with two-level systems (spins) through a spin-spin interaction and prove that coherent spin states of the conduction electron are…
The spin splitting of conduction band electrons in inversion-asymmetric InGaAs/InP quantum wells is studied by Shubnikov-de Haas measurements combining the analysis of beating patterns and coincidence measurements in doubly tilted magnetic…
From spin resonance of two-dimensional (2D) conduction electrons in a modulation doped SiGe/Si/SiGe quantum well structure we find a 2D anisotropy of both the line broadening (dephasing time) and the g-factor. We show that these can be…
Silicon is a leading candidate material for spin-based devices, and two-dimensional electron gases (2DEGs) formed in silicon heterostructures have been proposed for both spin transport and quantum dot quantum computing applications. The key…
We report the first theoretical estimate of the nuclear-spin dephasing time T_2 owing to the spin interaction with the two-dimensional electron gas, when the latter is in the integer quantum Hall state, in a two-dimensional heterojunction…