Related papers: Spin interference in silicon three-terminal one-di…
Spin drag measurements were performed in a two-dimensional electron system set close to the crossed spin helix regime and coupled by strong intersubband scattering. In a sample with uncommon combination of long spin lifetime and high charge…
In the absence of an external field, the Rashba spin-orbit interaction (SOI) in a two-dimensional electron gas in a semiconductor quantum well arises entirely from the screened electrostatic potential of ionized donors. We adjust the wave…
We study spin control for an electron confined in a flake of silicene. We find that the lowest-energy conduction-band levels are split by the diagonal intrinsic spin-orbit coupling into Kramers doublets with a definite projection of the…
The manipulation of Rashba-type spin-orbit coupling (SOC) in molecular beam epitaxy-grown Al$_x$In$_{1-x}$Sb/InSb/CdTe quantum well heterostructures is reported. The effective band bending provides robust two-dimensional quantum…
We investigate the transport properties in a zigzag silicene nanoribbon in the presence of an external electric field. The staggered sublattice potential and two kinds of Rashba spin-orbit couplings can be induced by the external electric…
The Rashba Hamiltonian describes the splitting of the conduction band as a result of spin-orbit coupling in the presence of an asymmetric confinement potential and is commonly used to model the electronic structure of confined narrow-gap…
The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…
The interplay of Rashba and quantum spin Hall effects in non-centrosymmetric systems presents both challenges and opportunities for spintronic applications. While Rashba spin-orbit coupling can disrupt the quantum spin Hall phase, their…
The states of a boron acceptor near a Si/SiO2 interface, which bind two low-energy Kramers pairs, have exceptional properties for encoding quantum information and, with the aid of strain, both heavy hole and light hole-based spin qubits can…
Several spin-orbit effects allow performing spin to charge inter-conversion: the spin Hall effects, the Rashba effect, or the spin-momentum locking in topological insulators. Here we focus on how the detection of this inter-conversion can…
We study the exchange interaction between two hole-spin qubits in a double quantum dot setup in a silicon nanowire in the presence of magnetic and electric fields. Based on symmetry arguments we show that there exists an effective spin that…
We propose a spin transistor using only non-magnetic materials that exploits the characteristics of bulk inversion asymmetry (BIA) in (110) symmetric quantum wells. We show that extremely large spin splittings due to BIA are possible in…
The Rashba effect in Ge/Si$_{0.15}$Ge$_{0.85}$ multiple quantum wells embedded in a p-i-n diode is studied through polarization and time-resolved photoluminescence. In addition to a sizeable redshift arising from the quantum-confined Stark…
We study the effect of the spin-orbit interaction on heavy holes confined in a double quantum dot in the presence of a magnetic field of arbitrary direction. Rich physics arise as the two hole states of different spin are not only coupled…
The quasi-two-dimensional electron gas found at the LaAlO3/SrTiO3 interface offers exciting new functionalities, such as tunable superconductivity, and has been proposed as a new nanoelectronics fabrication platform. Here we lay out a new…
We analyze the dynamics of the helical edge modes of a quantum spin Hall state in the presence of a spatially non-uniform Rashba spin-orbit (SO) interaction. A randomly fluctuating Rashba SO coupling is found to open a scattering channel…
The spin-Hall conductivity in spatially-homogeneous two-dimensional electron systems described by the spin-orbit Hamiltonian \hbar \Omega_p \sigma is presented as a sum of the universal part Me/8 \pi \hbar determined by the Berry phase…
Semiconductor spin qubits offer a unique opportunity for scalable quantum computation by leveraging classical transistor technology. Hole spin qubits benefit from fast all-electrical qubit control and sweet spots to counteract charge and…
The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…
Long coherence time and compatibility with semiconductor fabrication make spin qubits in silicon an attractive platform for quantum computing. In recent years, hole spin qubits are being developed as they have the advantages of weak…