Related papers: The Electronic States of Two Oppositely doped Mott…
A phase diagram of two Mott-Hubbard planes interacting with a short-range Coulomb repulsion is presented. Considering the case of equal amount of doping by holes in one layer as electrons in the other, a holon-doublon inter-layer exciton…
The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit…
Mott insulators sometimes show dramatic changes in their electronic states after photoirradiation, as indicated by photoinduced Mott-insulator-to-metal transition. In the photoexcited states of Mott insulators, electron wavefunctions are…
We report single layer resistivities of 2-dimensional electron and hole gases in an electron-hole bilayer with a 10nm barrier. In a regime where the interlayer interaction is stronger than the intralayer interaction, we find that an…
By bosonizing the electronic t-J model exactly on any two-dimensional (2D) lattices, and integrating out the gauge fluctuations combined to slave particles beyond mean fields, we get a theory in terms of physical Cooper pair and spin…
We analyze an analog of the $t$-$J$-$U$ model as applied to the description of a single moir\'e flat band of twisted WSe$_2$ bilayer. To take into account the correlation effects induced by a significant strength of the Coulomb repulsion,…
We explore the phase diagram of a twisted bilayer of strongly interacting electrons on a honeycomb lattice close to half-filling using the slave boson mean-field theory. Our analysis indicates that a variety of new phases can be realized as…
In contrast to the conventional von Neumann bipartite entanglement entropy (bEE), we show that a more appropriate description of the one-dimensional doped Mott insulator is a new kind of mutual entanglement entropy (mEE) between the charge…
This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to…
In the generalized-tJ model the effect of the large local Coulomb repulsion is accounted for by restricting the Hilbert space to states with at most one electron per site. In this case the electronic system can be viewed in terms of holes…
Topological insulators in the presence of strong Coulomb interaction constitute novel phases of matter. Transitions between these phases can be driven by single-particle or many-body effects. On the basis of {\it ab-initio} calculations, we…
We investigate the highly incoherent regime of hole-doped 2d Mott-Hubbard insulators at moderately small doping and temperatures T>=0.1J, where J is the exchange coupling. Within an extended dynamical mean-field theory of the t-J model and…
We studied the real space structure of states in twisted bilayer graphene at the `magic angle' $\theta = 1.08^\circ$. The flat bands close to charge neutrality are composed of a mix of `ring' and `center' orbitals around the AA stacking…
The ground state phase diagram of the half-filled repulsive Hubbard model in a bilayer is investigated using cluster dynamical mean field theory. For weak to intermediate values of Coulomb repulsion $U$, the system undergoes a transition…
We investigate exciton bound-state formation and crystallization effects in two-dimensional electron-hole bilayers. Performing unbiased path integral Monte Carlo simulations all quantum and Coulomb correlation effects are treated on first…
The 2-fold degeneracy of the ground state of a quasi-one-dimensional system allows it to support topological excitations such as solitons. We study the combined effects of Coulomb interactions and confinement due to interchain coupling on…
There are two classes of Mott insulators in nature, distinguished by their responses to weak doping. With increasing chemical potential, Type I Mott insulators undergo a first order phase transition from the undoped to the doped phase. In…
We construct the low energy theory of a doped Mott insulator, such as the high-temperature superconductors, by explicitly integrating over the degrees of freedom far away from the chemical potential. For either hole or electron doping, a…
We study the effect of interlayer Coulomb interaction in an electronic double layer. Assuming that each of the layers consists of a bipartite lattice, a sufficiently strong interlayer interaction leads to an interlayer pairing of electrons…
Using non-perturbative theoretical method, we address the problem of strong correlations in twisted bilayer-layer graphene at the magic angle. We concentrate on the solution without symmetry breaking, where conventional Mott insulating…