Related papers: Magnetoresistance of a quantum dot with spin-activ…
We study the Kondo effect in a quantum dot which is coupled to ferromagnetic leads and analyse its properties as a function of the spin polarization of the leads. Based on a scaling approach we predict that for parallel alignment of the…
We use nanometer-sized point contacts to a Co/Cu spin valve to study the giant magnetoresistance (GMR) of only a few Co domains. The measured data show strong device-to-device differences of the GMR curve, which we attribute to the absence…
Spin-dependent coherent quantum transport through carbon nanotubes (CNT) is studied theoretically within a tight-binding model and the Green's function partitioning technique. End-contacted metal/nanotube/metal systems are modelled and next…
Negative differential resistance - a decrease in current with increasing bias voltage - is a counter-intuitive effect that is observed in various molecular junctions. Here, we present a novel mechanism that may be responsible for such an…
We present analysis of the interacting quantum wire problem in the presence of magnetic field and spin-orbital interaction. We show that an interesting interplay of Zeeman and spin-orbit terms, facilitated by the electron-electron…
Electrons in a quantum-dot spin valve, consisting of a single-level quantum dot coupled to two ferromagnetic leads with magnetizations pointing in arbitrary directions, experience an exchange field that is induced on the dot by the…
We present calculations of quantized conductance and magnetoresistance in nanosize point contacts between two ferromagnetic metals. When conductance is open for only one conduction electrons spin-projection, the magnitude of…
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which…
In the present paper an influence of the anisotropic antisymmetric exchange interaction, the Dzialoshinskii-Moriya (DM) interaction, on entanglement of two qubits in various magnetic spin models, including the pure DM model and the most…
We study the ground state of $N$ weakly interacting electrons (with $N\le 10$) in a two-dimensional parabolic quantum dot with strong Rashba spin-orbit coupling. Using dimensionless parameters for the Coulomb interaction, $\lambda\lesssim…
We develop a strong coupling approach towards quantum magnetism in Mott insulators for Wannier obstructed bands. Despite the lack of Wannier orbitals, electrons can still singly occupy a set of exponentially-localized but nonorthogonal…
Resonant tunneling of electrons between two ferromagnets and a quantum dot in the presence of an externally applied magnetic field reveals a strong gate dependence in the linear and nonlinear bias regime. This gate dependence originates…
We study the few-electron eigenspectrum of a nanotube quantum dot with spin-orbit coupling. The two-electron phase diagram as a function of the length of the dot and the applied parallel magnetic field shows clear signatures of both…
Motivated by recent experimental work, we consider spin transport between a normal metal and a gapped quantum paramagnet. We model the latter as the magnonic Mott-insulating phase of an easy-plane ferromagnetic insulator. We evaluate the…
The electronic structure and numerous magnetic properties of MnBi magnetic systems are investigated using local spin density approximation (LSDA) with on-cite Coulomb correlations (LSDA+$U$) included. We show that the inclusion of Coulomb…
The desire to maximize the sensitivity of read/write heads and thus the information density of magnetic storage devices has produced an intense interest in the magnetoresistance (MR) of magnetic materials. Recent discoveries include…
Magnetoresistance (MR) in magnetic materials arises from spin-exchange coupling between local moments and itinerant electrons, representing a challenging many-body open-quantum problem. Here we develop a comprehensive microscopic theory of…
Magneto-resistance is a physical effect of great fundamental and industrial interest since it is the basis for the magnetic field sensors used in computer read-heads and Magnetic Random Access Memories. As device dimensions are reduced,…
An extension of the standard spin diffusion theory is presented by introducing a density-gradient (DG) term that is suitable for describing interface quantum tunneling phenomena. The magnetoresistance (MR) ratio is modified by the DG term…
Bilinear magnetoresistance has been studied theoretically in 2D systems with isotropic cubic form of Rashba spin-orbit interaction. We have derived the effective spin-orbital field due to current-induced spin polarization and discussed its…