Related papers: Electrical conduction of silicon oxide containing …
Silicon nanocrystals (Si NCs) have shown great promise for electroluminescent and photoluminescent applications. In order to optimize the properties of Si NC devices, however, electronic transport in Si NCs films needs to be thoroughly…
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. This insulating layer suffers of an electron trapping that…
We introduce a direct (Seebeck) and inverse (Peltier) thermoelectric effect induced by electron tunneling between closely separated conducting films. When a transverse temperature gradient is applied along one of two films, a bias voltage…
The charge transport mechanism of electron via traps in amorphous SiO$_2$ has been studied. Electron transport is limited by phonon-assisted tunneling between traps. Thermal and optical trap energies $W_\mathrm{t}=1.6$ eV,…
A new method of electronic refrigeration based on resonant Fowler-Nordheim emission is proposed and analyzed. In this method, a bulk emitter is covered with a-few-nm-thick film of a widegap semiconductor, creating an intermediate step…
We report on unique electronic properties in Fe-SiO2 nanocomposite thin films in the vicinity of the percolation threshold. The electronic transport is dominated by quantum corrections to the metallic conduction of the Infinite Cluster…
We demonstrate spin-accumulation signals controlled by the gate voltage in a metal-oxide-semiconductor field effect transistor structure with a Si channel and a CoFe/$n^{+}$-Si contact at room temperature. Under the application of a…
The ability to control electronic properties of a material by externally applied voltage is at the heart of modern electronics. In many cases, it is the so-called electric field effect that allows one to vary the carrier concentration in a…
Photoluminescence is observed at room temperature from phonon-assisted band-to-band emission in Si (1.067 eV peak) using unpatterned bulk p-type silicon wafer samples that were spin-coated with Er-doped (6 at. %) silica-gel films (0.13…
We study the thermal transport in magnetic tunnel junctions. Thermal gradients across the tunneling barrier appear around the Fowler-Nordheim tunneling regime, due to the current-induced heat caused by quantum interference. Both…
This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors.…
Silicon carbide (SiC) metal-oxide-semiconductor field-effect-transistors (MOSFETs) enable high-voltage and high-temperature power conversion. Compared to Si devices, they suffer from pronounced gate leakage due to the reduced electron…
Vanadium silicide (V$_3$Si) is a promising superconductor for integration with silicon-based electronics, however the interfacial growth kinetics have a strong influence on the resulting superconducting properties and are not yet fully…
We report electron transport measurements of a silicon double dot formed in multi-gated metal-oxide-semiconductor structures with a 15-nm-thick silicon-on-insulator layer. Tunable tunnel coupling enables us to observe an excitation spectrum…
Electron transport through Si-C bound alkyl chains, sandwiched between n-Si and Hg, is characterized by two distinct types of barriers, each dominating in a different voltage range. At low voltage, current depends strongly on temperature…
Doping stoichiometric SiNx layers (x=[N]/[Si]=1.33) with Si atoms by ultra-low energy ion implantation (ULE-II) and annealing them at different temperatures can significantly impact the switching characteristics. Electrical characterization…
Large-volume deployment of Si-based Seebeck generators can be foreseen only if polycrystalline rather than single crystalline materials can be actually used. The aim of this study was therefore to verify whether polycrystalline Si films…
Tunneling between a photo-excited p-type silicon tip and a gold surface is studied as a function of tip bias, tip/sample distance and light intensity. In order to extend the range of application of future spin injection experiments, the…
Electronic properties of the Si(111)-$7\times 7$ surface are studied using four- and two-probe conductivity measurements and tunneling spectroscopy. We demonstrate that the temperature dependence of the surface conductivity corresponds to…
Ta-doped SnO$_2$ films with high conductivity and high optical transparency have been successfully fabricated using rf-sputtering method and their electrical transport properties have been investigated. All films reveal degenerate…