Related papers: Detection mechanism for ferroelectric domain bound…
Polarization switching mechanisms in ferroelectric materials are fundamentally linked to local domain structure and presence of the structural defects, which both can act as nucleation and pinning centers and create local electrostatic and…
Domain walls (DWs) are ubiquitous in ferroelectric materials. Ferroelastic DWs refer to those who separate two domains with unparalleled polarizations (or two different ferroelastic variants). It is long believed that the structures of…
Domain wall dynamics in ferroic materials underpins functionality of data storage and information technology devices. Using localized electric field of a scanning probe microscopy tip, we experimentally demonstrate a surprisingly rich range…
We study theoretically the influence of the underlying domain microstructure on the electromechanical properties of ferroelectrics. Our calculations are based on a continuum approach that incorporates the long-range elastic and…
Ferroelectric liquid crystals (FLCs) couple the direction of their spontaneous electric polarization to the direction of tilt of their optic axis. Consequently, reversal of the electric polarization by an electric field gives rise to an…
For over 70 years, ferroelectric materials have been remaining one of the central research topics for condensed matter physics and material science, the interest driven both by fundamental science and applications. However, ferroelectric…
We show that, contrary to common belief, the depolarizing electric field generated by bound charges at thin-film surfaces can have a substantial impact on the domain structure of an improper ferroelectric with topological defects. In…
Stacking domain boundaries occur in Van der Waals heterostacks whenever there is a twist angle or lattice mismatch between subsequent layers. Not only can these domain boundaries host topological edge states, imaging them has been…
LuFe2O4 is a multiferroic system which exhibits ferroelectricity, charge order, and ferrimagnetic order simultaneously below ~230 K. The ferroelectric domains of LuFe2O4 are imaged with both piezoresponse force microscopy (PFM) and…
Manipulating magnetic domains is essential for many technological applications. Recent breakthroughs in Antiferromagnetic Spintronics brought up novel concepts for electronic device development. Imaging antiferromagnetic domains is of key…
Nanoscale polarization switching in ferroelectric materials by Piezoresponse Force Microscopy (PFM) in weak and strong indentation limits is analyzed using exact solutions for electrostatic and coupled electroelastic fields below the tip.…
Field-induced domain wall dynamics in ferroelectric materials underpins multiple applications ranging from actuators to information technology devices and necessitates a quantitative description of the associated mechanisms including giant…
The role of elastic defects on the kinetics of 180-degree uncharged ferroelectric domain wall motion is explored using continuum time-dependent LGD equation with elastic dipole coupling. In one dimensional case, ripples, steps and…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field…
Surprising asymmetry in the local electromechanical response across a single antiparallel ferroelectric domain wall is reported. Piezoelectric force microscopy is used to investigate both the in-plane and out-of- plane electromechanical…
Magnetic force microscopy (MFM) allows one to image the domain structure of ferromagnetic samples by probing the dipole forces between a magnetic probe tip and a magnetic sample. The magnetic domain structure of the sample depends on the…
Monitoring structural changes in ferroelectric thin films during electric field-induced polarization switching is important for a full microscopic understanding of the coupled motion of charges, atoms and domain walls. We combine standard…
Using direct variational method with 2-parametric trial function and Landau-Ginzburg-Devonshire thermodynamical approach, we derived analytical expressions for polarization spatial redistribution in the ferroelectrics caused by the biased…
Ferroelectrics are widely used for a broad array of technological applications due to their attractive electrical and electromechanical properties. In order to obtain large functional properties, material compositions are often designed to…
Ferroelectric materials are characterized by the presence of an electric dipole that can be reversed by application of an external electric field, a feature that is exploited in ferroelectric memories. All ferroelectrics are piezoelectric,…