Related papers: Effect of step stiffness and diffusion anisotropy …
With a Si(001) vicinal surface in mind, we study step wandering instability on a vicinal surface with an anisotropic surface diffusion whose orientation dependence alternates on each consecutive terrace. In a conserved system step wandering…
Bunching and meandering instability of steps at the 4H-SiC(0001) surface is studied by the kinetic Monte Carlo simulation method. Change in the character of step instability is analyzed for different rates of particle jumps towards step. In…
The meander instability of a vicinal surface growing under step flow conditions is studied within a solid-on-solid model. In the absence of edge diffusion the selected meander wavelength agrees quantitatively with the continuum linear…
Scanning tunneling microscopy experiments show that the unstable growth morphology observed during molecular beam homoepitaxy on slightly vicinal Si(001) surfaces consists of straight step bunches. The instability occurs under step- flow…
We investigate the nonlinear evolution of the Bales-Zangwill instability, responsible for the meandering of atomic steps on a growing vicinal surface. We develop an asymptotic method to derive, in the continuous limit, an evolution equation…
We study the step bunching kinetic instability in a growing crystal surface characterized by anisotropic diffusion. The instability is due to the interplay between the elastic interactions and the alternation of step parameters. This…
Step meandering during growth of gallium nitride (0001) surface is studied using kinetic Monte Carlo method. Simulated growth process, conducted in N-rich conditions are therefore controlled by Ga atoms surface diffusion. The model employs…
We introduce a simple two region model where the diffusion constant in a small region around each step on a vicinal surface can differ from that found on the terraces. Steady state results for this model provide a physically suggestive…
Step meandering instability in a Burton-Cabrera-Frank (BCF)-type model for the growth of an isolated, atomically high step on a crystal surface is analyzed. It is assumed that the growth is sustained by the molecular precursors deposition…
We study current-induced step bunching and wandering instabilities with subsequent pattern formations on vicinal surfaces. A novel two-region diffusion model is developed, where we assume that there are different diffusion rates on terraces…
On a Si(111) vicinal face near the structural transition temperature, the $1 \times 1$ structure and the $7 \times 7$ structure coexist in a terrace: the $1 \times 1$ structure is in the lower side of the step edge and the $7 \times 7$…
We study the effect of crystal symmetry and step-edge diffusion on the surface current governing the evolution of a growing crystal surface. We find there are two possible contributions to anisotropic currents, which both lead to the…
By taking account of the alternation of structural parameters, we study bunching of impermeable steps induced by drift of adatoms on a vicinal face of Si(001). With the alternation of diffusion coefficient, the step bunching occurs…
The steps at the crystal surfaces could be transparent for the migrating adatoms. In the case of significant transparency the velocity of a given step in a given moment is affected by detachment of atoms from rather distant steps in rather…
The growth of crystal surfaces, under non-equilibrium conditions, involves the displacement of mono-atomic steps by atom diffusion and atom incorporations into steps. The time-evolution of the growing crystal surface is thus governed by a…
The morphology of a growing crystal surface is studied in the case of an unstable two-dimensional step flow. Competition between bunching and meandering of steps leads to a variety of patterns characterized by their respective instability…
We study the effect of a constant electrical field applied on vicinal surfaces such as the Si$(111)$ surface. An electrical field parallel to the steps induces a meandering instability with a nonzero phase shift. Using the…
Step meandering due to a deterministic morphological instability on vicinal surfaces during growth is studied. We investigate nonlinear dynamics of a step model with asymmetric step kinetics, terrace and line diffusion, by means of a…
We studied the step dynamics during crystal sublimation and growth in the limit of fast surface diffusion and slow kinetics of atom attachment-detachment at the steps. For this limit we formulate a model free of the quasi-static…
The quasistatic approximation is a useful but questionable simplification for analyzing step instabilities during the growth/evaporation of vicinal surfaces. Using this approximation, we characterized in Part I of this work the effect on…