Related papers: Localization of electronic states in amorphous mat…
The scaling behavior of the thermoelectric transport properties in disordered systems is studied in the energy region near the metal-insulator transition. Using an energy-dependent conductivity $\sigma$ obtained experimentally, we extend…
The electronic properties of disordered systems at the Anderson metal-insulator transition (MIT) have been the subject of intense study for several decades. Thermoelectric properties at the MIT, such as thermopower and thermal conductivity,…
We study the thermal transport properties in three-dimensional disordered systems close to the metal-insulator transition within linear response. Using a suitable form for the energy-dependent conductivity $\sigma$, we show that the value…
The electronic transport properties in the presence of a temperature gradient in disordered systems near the metal-insulator transition [MIT] are considered. The d.c. conductivity $\sigma$, the thermoelectric power $S$, the thermal…
Several phenomena related to the critical behaviour of non-interacting electrons in a disordered 2d tight-binding system with a magnetic field are studied. Localization lengths, critical exponents and density of states are computed using…
We have varied the disorder in a two-dimensional electron system in silicon by applying substrate bias. When the disorder becomes sufficiently low, we observe the emergence of the metallic phase, and find evidence for a metal-insulator…
At low temperature T, a significant difference between the behavior of crystals on the one hand and disordered solids on the other is seen: sufficiently strong disorder can give rise to a transition of the transport properties from…
In contrast to the seminal weak localization prediction of a non-critical Hall constant ($R_{H}$) at the Anderson metal-insulator transition (MIT), $R_{H}$ in quite a few real disordered systems exhibits both, a strong $T$-dependence and…
Metal-insulator transition in anisotropic disordered Anderson model with both topological and diagonal disorder is investigated numerically. For four sets of the model parameters we found the critical disorder and the critical exponent and…
We study transport of interacting electrons in a low-dimensional disordered system at low temperature $T$. In view of localization by disorder, the conductivity $\sigma(T)$ may only be non-zero due to electron-electron scattering. For weak…
In one-dimensional disordered wires electronic states are localized at any energy. Correlations of the states at close positive energies and the AC conductivity $\sigma(\omega)$ in the limit of small frequency are described by the…
We investigate the finite-size scaling behavior of the conductivity in a two-dimensional Dirac electron gas within a chiral sigma model. Based on the fact that the conductivity is a function of system size times scattering rate, we obtain a…
Using a finite-size scaling method, we calculate the localization properties of a disordered two-dimensional electron system in the presence of a random magnetic field. Below a critical energy $E_c$ all states are localized and the…
We present the metal - insulator transition study of a quantum site percolation model on simple cubic lattice. Transfer matrix method is used to calculate transport properties - Landauer conductance - for the binary distribution of…
Two-dimensional ferromagnetic electron gases subject to random scalar potentials and Rashba spin-orbit interactions exhibit a striking quantum criticality. As disorder strength $W$ increases, the systems undergo a transition from a normal…
Using the Anderson model for disordered systems the fluctuations in electron spectra near the metal--insulator transition were numerically calculated for lattices of sizes up to 28 x 28 x 28 sites. The results show a finite--size scaling of…
The zero temperature transport properties of two-dimensional lattice systems with static random magnetic flux per plaquette and zero mean are investigated numerically. We study the two-terminal conductance and its dependence on energy,…
The possibility of driving an Anderson metal-insulator transition in the presence of scale-free disorder by changing the correlation exponent is numerically investigated. We calculate the localization length for quasi-one-dimensional…
A general method to describe a second-order phase transition is discussed. It starts from the energy level statistics and uses of finite-size scaling. It is applied to the metal-insulator transition (MIT) in the Anderson model of…
Finding microscopic models for metallic states that exhibit quantum critical properties such as $\omega/T$ scaling is a major theoretical challenge. We calculate the local dynamical spin susceptibility $\chi(T,\omega)$ for a Hubbard model…