Related papers: Spin flip scattering at Al surfaces
The temperature dependence of the spin diffusion length typically reflects the scattering mechanism responsible for spin relaxation. Within non-magnetic metals it is reasonable to expect the Elliot-Yafet mechanism to play a role and thus…
We performed non-local electrical measurements of a series of Py/Cu lateral spin valve devices with different Cu thicknesses. We show that both the spin diffusion length of Cu and the apparent spin polarization of Py increase with Cu…
Spin relaxation in mesoscopic Ag wires in the diffusive transport regime is studied via nonlocal spin valve and Hanle effect measurements performed on permalloy/Ag lateral spin valves. The ratio between momentum and spin relaxation times is…
In this work, a scanning inverse spin Hall effect measurement system based on a shorted coaxial resonator has been built, which provides a high throughput method to characterize spin transport properties. The spin diffusion length of Ta at…
The contributions to the spin relaxation in copper (Cu) nanowires are quantified by carefully analyzing measurements of both charge and spin transport in lateral spin valves as a function of temperature and thickness. The temperature…
The scattering of Rb atoms on an anti-relaxation coating was studied. No significant change in the spin relaxation probability of Rb atoms by single scattering from a tetracontane surface was observed by cooling the film from 305 to 123 K.…
Spin-polarized electrical transport is investigated in $ Al_{2}O_{3}/Ni_{80}Fe_{20}/Al_{2}O_{3}$ thin films for permalloy thickness between 6 and 20nm. The degree of spin-polarization of the current flowing in the plane of the film is…
We have performed depth dependent muon spin rotation/relaxation studies of the dynamics of single layer films of {\it Au}Fe and {\it Cu}Mn spin glasses as a function of thickness and of its behavior as a function of distance from the vacuum…
We determined the spin-transport properties of Pd and Pt thin films by measuring the increase in ferromagnetic resonance damping due to spin-pumping in ferromagnetic (FM)-nonferromagnetic metal (NM) multilayers with varying NM thicknesses.…
We have recently found in insulating granular Al thin film a new experimental feature (Delahaye et al., Phys. Rev. Lett. 106, 186602, 2011), namely the existence of a conductance relaxation that is not sensitive to gate voltage changes.…
The spin relaxation induced by the Elliott-Yafet mechanism and the extrinsic spin Hall conductivity due to the skew-scattering are investigated in 5d transition-metal ultrathin films with self-adatom impurities as scatterers. The values of…
We show, both experimentally and theoretically, a novel route to obtain giant room temperature spin Hall effect due to surface-assisted skew scattering. In the experiment, we report the spin Hall effect in Pt-doped Au films with different…
There exists considerable confusion in estimating the spin diffusion length of materials with high spin-orbit coupling from spin pumping experiments. For designing functional devices, it is important to determine the spin diffusion length…
In magnetoresistive (MR) studies of magnetic multilayers composed of combinations of ferromagnetic (F) and non-magnetic (N) metals, the magnetic moment (or related 'spin') of each conduction electron plays a crucial role, supplementary to…
We study the effect of the disorder on the metallic behavior of a two-dimensional electron system in silicon. The temperature dependence of conductivity $\sigma (T)$ was measured for different values of substrate bias, which changes both…
In order to explore the spin accumulation, evaluating the spin galvanic and spin Hall effect, we utilize the semi-classical Boltzmann equation based on input from the relativistic Korringa-Kohn-Rostoker Green's function method, within the…
Uniaxial compressive strain along the [001] direction strongly suppresses the spin relaxation in silicon. When the strain level is large enough so that electrons are redistributed only in the two valleys along the strain axis, the dominant…
We report the reduction in residual stress of AlN thin films and also the crystal structure, surface morphology and nanomechanical properties of magnetron sputtered as a function of substrate temperature (Ts, 35 - 600 ?C). The residual…
We present experimental light scattering measurements from aluminum surfaces obtained by cold rolling. We show that our results are consistent with a scale invariant description of the roughness of these surfaces. The roughness parameters…
It is shown that the conductance relaxations observed in electrical field effect measurements on granular Al films are the sum of two contributions. One is sensitive to gate voltage changes and gives the already reported anomalous…