Related papers: Electrical conductance at initial stage in epitaxi…
The electrical conductivity changes of the Si(111)-(6x6)Au surface at early stage of Pb deposition was studied experimentally and theoretically as a function of coverage. Pb deposition onto a Si(111)-(6x6)Au surface induce strong change of…
Single layer Pb on top of (111) surfaces of group IV semiconductors hosts charge density wave and superconductivity depending on the coverage and on the substrate. These systems are normally considered to be experimental realizations of…
Atomic-sized lead (Pb) contacts are deposited and dissolved in an electrochemical environment, and their transport properties are measured. Due to the electrochemical fabrication process, we obtain mechanically unstrained contacts and…
W-based granular metals have been prepared by electron beam induced deposition from the tungsten-hexacarbonyl W(CO)6 precursor. In situ electrical conductivity measurements have been performed to monitor the growth process and to…
A nanopores's response to an electrical potential drop is characterized by its electrical conductance, \tilde{G}. It has long been thought that at low concentrations, the conductance is independent of the electrolyte concentration,…
This study investigates minority electron diffusion length and carrier recombination phenomena within p-type, 300 nm-thick Ga2O3 epitaxial films. Utilizing Electron Beam-Induced Current (EBIC) and Cathodoluminescence (CL) spectroscopy,…
Pulsed Laser Deposition in molecular-beam epitaxy environment (Laser-MBE) has been used to grow high quality BaCuOx/CaCuO2 superlattices. In situ Reflection High Energy Electron Diffraction (RHEED) shows that the growth mechanism is…
We present a study of the rubidium adsorption on the Si(111)-(7x7) surface and the related Rb-induced reconstructions as a function of deposition temperature and Rb-coverage via scanning tunneling microscopy (STM) and low-energy electron…
Electron conduction through quasi-one-dimensional (1D) indium atomic wires on silicon (the Si(111)-4x1-In reconstruction) is clarified with the help of local structural analysis using scanning tunneling microscopy. The reconstruction has a…
Conductance of submicron constrictions of PbTe:Bi was studied up to 8T and between 4.2K and 50mK. The structures were fabricated by electron beam lithography and chemical etching of high--electron mobility films grown by MBE on BaF_2. In…
The generation of high magnetic fields requires materials with high electric conductivity and good strength properties. Cu/Nb composites are considered to be good candidates for this purpose. In this work we aim to predict, from theory, the…
The reflectance difference (RD) as a function of film thickness was measured during Pb deposition on Si(111)-(6x6)Au surface at 105 K. The oblique incident s- and p-polarized light with energy range 0.25-0.60 eV was used. The component of…
During layer-by-layer homoepitaxial growth, both the Reflection High-Energy Electron Diffraction (RHEED) intensity and the x-ray reflection intensity will oscillate, and each complete oscillation indicates the addition of one monolayer of…
Electrical conductivity (sigma_dc) of the cellular Si/SiC ceramic composites has been measured over a temperature range 25-1073 K while the thermoelectric power (S) has been measured over 25-300 K. Remarkably, these cellular compounds…
Thin films of single-crystal Pb$_{1-y}$Bi$_{y}$Sr$_{2}$Y$_{1-x}$Ca$_{x}$Cu$_{2}$O$_{7+\delta}$ (PbBi1212) were grown on SrTiO$_{3}$ (100) substrates by a two-step growth technique in which an amorphous film is annealed at 970 $^\circ$C in a…
The conductance through a semi-infinite one-dimensional wire, partly embedded in a superconducting bulk electrode, is studied. When the electron-electron interactions within the wire are strongly repulsive, the wire effectively decouples…
The transport properties of superconducting single crystal Pb nanowires of 55 nm and 70 nm diameter are studied by standard four electrodes method. Resistance-temperature (R-T) scans and magneto-resistance (R-H) measurements show a series…
Layered 1$T$-TiSe$_{2}$ has attracted much interest for the competition of charge density wave (CDW) and superconductivity in its bulk and even monolayer forms. Here we perform first-principles calculations of the electronic structure,…
We measure the electron conductivity of the surface states and the subsurface space charge layer originating from the Si(111)-4x1-In reconstruction as a function of temperature. The conductivity of the surface states drops sharply around…
Heteroepitaxial structures based on Bi$_{2}$Te$_{3}$-type topological insulators (TIs) exhibit exotic quantum phenomena. For optimal characterization of these phenomena, it is desirable to control the interface structure during film growth…