Related papers: Two-Dimensional Electron Gas in InGaAs/InAlAs Quan…
We present an experimental study of low temperature electronic transport in the hybridization gap of inverted InAs/GaSb composite quantum wells. Electrostatic gate is used to push the Fermi level into the gap regime, where the conductance…
Gate-tunable high-mobility InSb/In_{1-x}Al_{x}Sb quantum wells (QWs) grown on GaAs substrates are reported. The QW two-dimensional electron gas (2DEG) channel mobility in excess of 200,000 cm^{2}/Vs is measured at T=1.8K. In asymmetrically…
Two-dimensional electron systems offer an appealing platform to explore long-lived excitations arising due to collinear carrier scattering enabled by phase-space constraints at the Fermi surface. Recently it was found that these effects can…
We calculate the mobility of a two-dimensional electron gas residing at the interface of LaAlO$_{3}$/SrTiO$_{3}$ following a three band Boltzmann approach at low temperature, where carrier-charged impurity scattering process is assumed to…
We derive an expression for the drag rate (i.e., interlayer momentum transfer rate) for carriers in two coupled two-dimensional gases to lowest nonvanishing order in the screened interlayer electron--electron interaction, valid for {\sl…
Using ultra-high quality SiGe/Si/SiGe quantum wells at millikelvin temperatures, we experimentally compare the energy-averaged effective mass, $m$, with that at the Fermi level, $m_F$, and verify that the behaviours of these measured values…
We calculate the conductance of a quantum wire with two occupied subbands in a presence of a barrier taking into account the interaction between electrons. We extend the renormalization-group equation for the scattering matrix of the…
Deviations from Landau Fermi liquid behavior are ubiquitous features of the normal state of unconventional superconductors. Despite several decades of investigation, the underlying mechanisms of these properties are still not completely…
We investigate the effect due to background impurities embedded in the region of two-dimensional electron gases to the magnetotransport. These impurities are achieved by homogeneously incorporating Si atoms in single quantum wells of high…
Quantum dot lattices (QDLs) have the potential to allow for the tailoring of optical, magnetic and electronic properties of a user-defined artificial solid. We use a dual gated device structure to controllably tune the potential landscape…
The results of experimental study of interference induced magnetoconductivity in narrow HgTe quantum wells of hole-type conductivity with a normal energy spectrum are presented. Interpretation of the data is performed with taking into…
In the present paper one-dimensional two-component atomic Fermi gas is considered in long-wave limit as a Luttinger liquid. The mechanisms leading to instability of the non-Fermi-liquid state of a Luttinger liquid with two-level impurities…
Near surface indium arsenide quantum wells have recently attracted a great deal of interest since they can be interfaced epitaxially with superconducting films and have proven to be a robust platform for exploring mesoscopic and topological…
We present longitudinal and Hall magneto-resistance measurements of a ``magnetic'' two-dimensional electron gas (2DEG) formed in modulation-doped Zn$_{1-x-y}$Cd$_{x}$Mn$_{y}$Se quantum wells. The electron spin splitting is temperature and…
We study the scattering properties of a bi-inductive electrical lattice consisting of a one-dimensional array of coupled LC units. For an initially localized electrical excitation, and in the absence of any impurity, we compute in closed…
We investigate the electronic structure of a two-dimensional electron gas created at the surface of the multi-valley semimetal 1T-PtSe$_2$. Using angle-resolved photoemission and first-principles-based surface space charge calculations, we…
InAs quantum wells (QWs) grown on InP substrates are interesting for their applications in devices with high spin-orbit coupling (SOC) and their potential role in creating topologically nontrivial hybrid heterostructures. These QWs rely on…
Two dimensional electron gases (2DEGs) realized at GaAs/AlGaAs single interfaces by molecular-beam epitaxy (MBE) reach mobilities of about 15 million cm^2/Vs if the AlGaAs alloy is grown after the GaAs. Surprisingly, the mobilities may drop…
We present measurements of the cooling length $\ell_E$ for hot electrons in a GaAs-based high mobility two-dimensional electron gas (2DEG). The thermal measurements are performed on a long 60 $\mu$m-wide channel, which is Joule-heated at…
We present a theory of the quasi two-dimensional electron gas (2DEG) systems which appear near the surface of SrTiO$_3$ when a large external electric field attracts carriers to the surface. We find that non-linear and non-local screening…