Related papers: Control of spin relaxation in semiconductor double…
One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We…
Achieving control over the electron spin in quantum dots (artificial atoms) or real atoms promises access to new technologies in conventional and in quantum information processing. Here we review our proposal for quantum computing with…
We present a set of concrete and realistic ideas for the implementation of a small-scale quantum computer using electron spins in lateral GaAs/AlGaAs quantum dots. Initialization is based on leads in the quantum Hall regime with tunable…
Gate-defined semiconductor quantum dots utilize fast electrical control to manipulate spin and charge states of individual electrons. Electrical pulse distortions can limit control fidelities but are difficult to measure at the device…
Electron spin qubits in silicon, whether in quantum dots or in donor atoms, have long been considered attractive qubits for the implementation of a quantum computer due to the semiconductor vacuum character of silicon and its compatibility…
We study the relaxation of a single electron spin in a circular quantum dot in a transition-metal dichalcogenide monolayer defined by electrostatic gating. Transition-metal dichalcogenides provide an interesting and promising arena for…
We study the effect of the coupling between the hole $s$ shell of one quantum dot and the $p$ shell in the other dot forming a quantum dot molecule on the spin relaxation between the sublevels of the hole $s$ state. Using an effective model…
One-dimensional quantum wires are considered as prospective elements for spin transport and manipulation in spintronics. We study spin dynamics in semiconductor GaAs-like nanowires with disorder and spin-orbit interaction by using a…
A double quantum dot inserted in parallel between two metallic leads allows to entangle the electron spin with the orbital (dot index) degree of freedom. An Aharonov-Bohm orbital phase can then be transferred to the spinor wavefunction,…
Coherent single electron spin oscillation in a double quantum dot system driven by a magnetic electron spin resonance field is studied theoretically using a Bloch-type rate equation approach. The oscillation frequency and relaxation time…
The presence of non-degenerate valley states in silicon can drastically affect electron dynamics in silicon-based heterostructures, leading to electron spin relaxation and spin-valley coupling. In the context of solid-state spin qubits, it…
Spin shuttling has crystalized as a powerful and promising tool for establishing intermediate-range connectivity in semiconductor spin-qubit devices. Although experimental demonstrations have performed exceptionally well on different…
We investigate coherent control of a single electron trapped in a semiconductor quantum dot. Control is enabled with a strong laser field detuned with respect to the electron light-hole optical transitions. For a realistic experimental…
We measure the interdot charge relaxation time T_1 of a single electron trapped in an accumulation mode Si/SiGe double quantum dot. The energy level structure of the charge qubit is determined using photon assisted tunneling, which reveals…
We study the spin-spin interaction between quantum dots coupled through a two dimensional electron gas with spin-orbit interaction. We show that the interplay between transverse electron focusing and spin-orbit coupling allows to…
The Coulomb interactions between electrons play important roles in coupling multiple qubits in various quantum systems. Here we demonstrate controlled quantum operations of three electron charge qubits based on three capacitively coupled…
We develop a theory of spin orientation by electric current in (110)-grown semiconductor quantum wells. The controversy in the factor of two from two existed approaches is resolved by pointing out the importance of energy relaxation in this…
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved…
We show that the mixing between spin and valley degrees of freedom in a silicon quantum bit (qubit) can be controlled by a static electric field acting on the valley splitting $\Delta$. Thanks to spin-orbit coupling, the qubit can be…
We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their…