Related papers: A Tunable Anomalous Hall Effect in a Non-Ferromagn…
The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of…
In a heavy fermion system, there exists the anomalous Hall effect caused by localized $f$-orbital freedom, in addition to the normal Hall effect due to the Lorentz force. In 1994, we found that the Hall coefficient caused by the anomalous…
We have investigated the magnetoresistance of lithographically prepared single-layer graphene nanoribbons in pulsed, perpendicular magnetic fields up to 60 T and performed corresponding transport simulations using a tight-binding model and…
We propose a magnon-driven anomalous Hall effect in altermagnets, arising from the coupling between coherently excited chiral magnons and chiral electronic motion. Using density-matrix perturbation theory and symmetry analysis, we show that…
In order to investigate whether space coordinates are intrinsically noncommutative, we make use of the Hall effect on the two-dimensional plane. We calculate the Hall conductivity in such a way that the noncommutative U(1) gauge invariance…
We fabricate van der Waals heterostructure devices using few unit cell thick Bi$_2$Sr$_2$CaCu$_2$O$_{8+\delta}$ for magnetotransport measurements. The superconducting transition temperature and carrier density in atomically thin samples can…
High magnetic field and low temperature transport is carried out in order to characterize the charge carriers of $\text{PtSe}_2$. In particular, the Shubnikov-de Haas oscillations arising at applied magnetic field strengths $\gtrsim…
A theory of recently discovered anomalous low-field magnetoresistance is developed for the system of two-dimensional electrons scattered by hard disks of radius $a,$ randomly distributed with concentration $n.$ For small magnetic fields the…
We have observed the Hall effect in the field-induced accumulation layer on the surface of small-molecule organic semiconductor. The Hall mobility mu_H increases with decreasing temperature in both the intrinsic (high-temperature) and…
The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS…
The anomalous Hall effect is deemed to be a unique transport property of ferromagnetic metals, caused by the concerted action of spin polarization and spin-orbit coupling. Nevertheless, recent experiments have shown that the effect also…
Electric field effect devices based on mesoscopic graphite are fabricated for galvanomagnetic measurements. Strong modulation of magneto-resistance and Hall resistance as a function of gate voltage is observed as sample thickness approaches…
At sufficiently low temperatures, many quantum effects, such as weak localization, electron-electron interaction (EEI), and Kondo screening, can lead to pronounced corrections to the semiclassical electron transport. Although low…
Hall resistivity and magneto-thermopower have been measured for colossal magnetoresistive Tl2Mn2O7 over wide temperature and magnetic-field ranges. These measurements revealed that a small number of free electron-like carriers is…
Screening of an external random potential by a two dimensional (2D) Fermi liquid may be strongly dependent on the degree of its polarization. This is considered as a possible mechanism for the observed strong magnetoresistance of the 2D…
The large magnetic anisotropy in the layered ferromagnet Fe_{1/4}TaS_2 leads to very sharp reversals of the magnetization $\bf M$ at the coercive field. We have exploited this feature to measure the anomalous Hall effect (AHE), focussing on…
We prepared high epitaxial thin films of the compound Sr_2FeMoO_6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room…
The anomalous Hall effect has had a profound influence on the understanding of many electronic topological materials but is much less studied in their bosonic counterparts. We predict that an intrinsic anomalous Hall effect exists in a…
Universality of the extraordinary Hall effect scaling was tested in granular three-dimensional Ni-SiO2 films across the metal-insulator transition. Three types of magnetotransport behavior have been identified: metallic, weakly insulating…
Magnetotransport properties of p-InMnAs layers are studied in pulsed magnetic fields up to 30 T. Samples were prepared by the laser deposition and annealed by ruby laser pulses. Well annealed samples show p-type conductivity while they were…