Related papers: Fe implanted ferromagnetic ZnO
We report on the stability and magnetic state of ion implanted $^8$Li in single crystals of the semiconductor ZnO using $\beta$-detected nuclear magnetic resonance. At ultradilute concentrations, the spectra reveal distinct Li sites from…
Transition metals implanted in single crystal MgO can precipitate out at grain boundaries or remain embedded in bulk. Using first-principles calculations based on density functional theory we have calculated the thermodynamic stability and…
In the past decade, room temperature ferromagnetism was often observed in transition metal doped semiconductors, which were claimed as diluted magnetic semiconductors (DMS). Nowadays intensive activities are devoted to clarify wether the…
The possibility to induce long range ferromagnetic order by doping oxides with transition metal ions has become a very exciting challenge in the last decade. Theoretically, it has been claimed that Mn doped ZrO$_2$ could be a very promising…
Ferromagnetic properties of In1-xMnxAs thin films were investigated. Room temperature ferromagnetic order was observed in nominally single-phase films with x = 0.01-0.10. Magnetization measurements indicated that these In1-xMnxAs samples…
Recently, d0 ferromagnetic materials have been projected as one of the promising novel materials for spintronics applications. In this work, we have studied Li-doped ZnO compounds, i.e. Zn1-xLixO (x=0, 0.02, 0.04, and 0.06) samples,…
The prediction of ferromagnetism at room temperature in Co-ZnO thin films has generated a large interest in the community due to the possible applications. However, the results are controversial, going from ferromagnetism to…
The magneto-transport properties of single proton-implanted ZnO and of Li(7\%)-doped ZnO microwires have been studied. The as-grown microwires were highly insulating and not magnetic. After proton implantation the Li(7\%) doped ZnO…
200 nm thick SiO2 layers grown on Si substrates and Ge ions of 150 keV energy were implanted into SiO2 matrix with Different fluences. The implanted samples were annealed at 950 C for 30 minutes in Ar ambience. Topographical studies of…
The search for oxide-based room-temperature ferromagnetism has been one of the holy grails in condensed matter physics. Room-temperature ferromagnetism observed in Nb-doped SrTiO3 single crystals is reported in this Rapid Communication. The…
Room-temperature ferrimagnetism was discovered for the anti-site-disordered perovskite Ca2MnOsO6 with Tc = 305 K. Ca2MnOsO6 crystallizes into an orthorhombic structure with a space group of Pnma, in which Mn and Os share the…
Ferromagnetism, as one of the most valuable properties of materials, has attracted sustained and widespread interest in basic and applied research from ancient compasses to modern electronic devices. Traditionally, intrinsic ferromagnetism…
We report ultra-low intrinsic magnetic damping in Co$_{\text{25}}$Fe$_{\text{75}}$ heterostructures, reaching the low $10^{-4}$ regime at room temperature. By using a broadband ferromagnetic resonance technique, we extracted the dynamic…
The origin of room temperature (RT) ferromagneticlike behavior in ZnO-based diluted magnetic semiconductors is still an unclear topic. The present work concentrates on the appearance of RT magnetic moments in just mixed ZnO/Co3O4 mixtures…
Ion implantation of Mn combined with pulsed laser melting is employed to obtain two representative compounds of dilute ferromagnetic semiconductors (DFSs): Ga1-xMnxAs and In1-xMnxAs. In contrast to films deposited by the widely used…
Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in…
Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room…
Insulating uniaxial room-temperature ferromagnets are a prerequisite for commonplace spin wave-based devices, the obstacle in contemporary ferromagnets being the coupling of ferromagnetism with large conductivity. We show that the uniaxial…
The magnetic properties of Fe1.03Te under hydrostatic pressure up to p ~ 5.7 GPa were investigated by means of muon spin rotation, dc magnetization, and neutron depolarization measurements. With increasing pressure the antiferromagnetic…
The microstructure of (In,Mn)As thin films grown using metalorganic vapor phase epitaxy (MOVPE) was investigated to determine the origin of room temperature ferromagnetism in these films. Transmission electron microscopy (TEM) based…