Related papers: 1/f noise in nanowires
We have measured the low frequency (1mHz<f<10Hz) resistance fluctuations in metallic nanowires (diameter 15nm to 200nm) in the temperature range 77K to 400K. The nanowires were grown electrochemically in polycarbonate membranes and the…
We measured the low frequency (10mHz < f < 10Hz) resistance fluctuations (Noise) in single crystalline ferromagnetic Ni nanowires (diameter ~35nm) in the temperature range 80K-300K. The noise spectral power shows 1/f dependence. The…
We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by…
We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms,…
Low-frequency noise with a spectral density that depends inversely on frequency (f) has been observed in a wide variety of systems including current fluctuations in resistors, intensity fluctuations in music and signals in human cognition.…
In this paper, we review the 1/f-type noise properties of nanoelectronic devices focusing on three demonstrative platforms: resistive switching memories, graphene nanogaps and single-molecule nanowires. The functionality of such ultrasmall…
An oscillatory magnetic field dependence of the DC voltage is observed when a low-frequency current flows through superconducting Sn-Ge thin-film composites near the percolation threshold. The paper also studies the experimental…
We present a microscopic theory of the low-frequency voltage noise (known as "1/f" noise) in micrometer-thick films of hydrogenated amorphous silicon. This theory traces the noise back to the long-range fluctuations of the Coulomb potential…
We report on low-frequency current fluctuations, i.e. electronic noise, in quasi-one-dimensional (TaSe$_4$)$_2$I Weyl semimetal nanoribbons. It was found that the noise spectral density is of the 1/f type and scales with the square of the…
The current noise in a classical one-dimensional charge density wave system is studied in the weak pinning regime by solving the overdamped equation of motion numerically. At low temperatures and just above the zero temperature depinning…
The electric noise can be an important limitation for applications of conducting elements of size in the nanometer range. The intrinsic electrical noise of prospective materials for opto-spintronics applications like ZnO has not been…
Cobalt disilicide provides a promising nearly-epitaxial superconducting material on silicon, which is compatible with high-density integrated circuit technology. We have characterized CoSi$_{2}$ superconducting microwave cavities around 5.5…
The 1/f noise in pentacene thin film transistors has been measured as a function of device thickness from well above the effective conduction channel thickness to only two conducting layers. Over the entire thickness range, the spectral…
We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic…
We present a novel and comprehensive model of 1/f noise in nanoscale graphene devices that accounts for the unusual and so far unexplained experimental characteristics. We find that the noise power spectral density versus carrier…
Ubiquitous low frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low frequency electronic noise in single-layer transition metal dichalcogenide MoS2…
We have studied the $1/f$ voltage noise of gold nano-contacts in electromigrated and mechanically controlled break-junctions having resistance values $R$ that can be tuned from 10 $\Omega$ (many channels) to 10 k$\Omega$ (single atom…
The nature of the low-frequency current fluctuations, i.e. carrier number vs. mobility, defines the strategies for noise reduction in electronic devices. While the 1/f noise in metals has been attributed to the electron mobility…
We investigate the 1/f noise of the Five-hundred-meter Aperture Spherical Telescope (FAST) receiver system using drift-scan data from an intensity mapping pilot survey. All the 19 beams have 1/f fluctuations with similar structures. Both…
We present 1/$f$ noise measurements of IrO$_2$ nanowires from 1.7 to 350 K. Results reveal that the noise magnitude (represented by Hooge parameter $\gamma$) increases at low temperatures, indicating low-frequency resistance noise from…