Related papers: Switching spin valves using r.f. currents
As an alternative to conventional magnetic field, the effective spin-orbit field in transition metals, derived from the Rashba field experienced by itinerant electrons confined in a spatial inversion asymmetric plane through the s-d…
It is shown that a pulsed current driven through Ni nanowires provokes an irreversible magnetization reversal at a field distant from the spontaneous switching field $H_{sw}$ by $\Delta H$ of as much as 40 % of $H_{sw}$. The state of the…
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic…
Spin-orbit interaction derived spin torques provide a means of reversing the magnetization of perpendicularly magnetized ultrathin films with currents that flow in the plane of the layers. A basic and critical question for applications is…
Electrical switching of antiferromagnets (AFM) is critical for AFM spintronics. However, electrical pulse-induced Neel vector reorientation in AFM insulators, while predicted to occur at much faster timescales than ferromagnetic switching,…
We fabricated a current-perpendicular-to-plane pseudo-spin-valve nanopillar comprising a thick and a thin Co rings with deep submicron lateral sizes. The dc current can effectively induce the flux-closure vortex states in the rings with…
Electric control of magnetic vortex dynamics in a reproducible way and on an ultrafast time scale is key element in the quest for efficient spintronic devices with low-energy consumption. To be useful the control scheme should ideally be…
We present theoretical description of the precessional switching processes induced by simultaneous application of spin-polarized current and external magnetic field to antiferromagnetic component of the "pinned" layer. We found stability…
We theoretically study the influence of a predominant field-like spin-orbit torque on the magnetization switching of small devices with a uniform magnetization. We show that for a certain range of ratios (0.23-0.55) of the Slonczewski to…
Applications of magnetic memory devices greatly benefit from ultra-fast, low-power switching. Here we propose how this can be achieved efficiently in a nano-sized synthetic antiferromagnet by using perpendicular-to-the-plane…
The anisotropic spin splitting in unconventional magnets opens new opportunities for realizing spintronic functionalities without relying on net magnetization or relativistic spin-orbit coupling. Here, we propose a spin valve and a spin…
We present a possibility to switch the chirality of a spin vortex occurring in a magnetic nanodisk by applying a uniform in-plane field pulse, based on optimizing its strength and duration. The related spin-dynamical process, investigated…
Microwave assisted magnetization reversal has been investigated in a bilayer system of Pt/ferromagnet by detecting a change in the polarity of the spin pumping signal. The reversal process is studied in two material systems, Pt/CoFeB and…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
Using the complex stereographic variable representation for the macrospin, from a study of the nonlinear dynamics underlying the generalized Landau-Lifshitz(LL) equation with Gilbert damping, we show that the spin-transfer torque is…
Future applications of antiferromagnets (AFs) in many spintronics devices rely on the precise manipulation of domain walls. The conventional approach using static magnetic fields is inefficient due to the low susceptibility of AFs. Recently…
We inject current pulses into uniformly magnetized patterns of thin films of the itinerant ferromagnet SrRuO3, while monitoring the effective temperature of the patterns during the current injection. We gradually increase the amplitude of…
The spin injection and accumulation in metallic lateral spin valves with transparent interfaces is studied using d.c. injection current. Unlike a.c.-based techniques, this allows investigating the effects of the direction and magnitude of…
We study a magnetization reversal by an electric current pulse in a superconductor/insulating ferromagnet/superconductor Josephson junction placed on top of a 3D topological insulator. It is demonstrated that such a system is perspective…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…