Related papers: Pyramidal structural defects in erbium silicide th…
We have used the two-step growth technique, quench condensing followed by an anneal, to grow ultra thin films of silver on glass substrates. As has been seen with semiconductor substrates this process produces a metastable homogeneous…
Nanocrystalline materials exhibit properties that can differ substantially from those of their single crystal counterparts. As such, they provide ways to enhance and optimise their functionality for devices and applications. Here we report…
Atomically sharp epitaxial growth of Bi2Se3 films is achieved on Si (111) substrate with MBE (Molecular Beam Epitaxy). Two-step growth process is found to be a key to achieve interfacial-layer-free epitaxial Bi2Se3 films on Si substrates.…
Thin superconducting films of magnesium diboride (MgB2) with Tc \approx 24K were prepared on various oxide substrates by pulsed laser deposition (PLD) followed by an in-situ anneal. A systematic study of the influence of various in-situ…
Two-dimensional (2D) magnetic materials integrated with graphene offer a compelling platform for next-generation spintronic devices, yet nickel in its 2D form remains largely unexplored, due to fundamental synthesis limitations. Here, we…
Hetero-epitaxial films based on bismuth telluride with excess of Te were grown by hat wall technique at the surface of the mica (muscovite). Galvanomagnetic properties of the thin films were measured, and quantum oscillations of the…
Based on first-principles calculation we predict two new thermodynamically stable layered-phases of silicon, named as silicites, which exhibit strong directionality in the electronic and structural properties. As compared to silicon…
Films of (111)-textured Cu, Ni, and Cu$_x$Ni$_y$ were evaluated as substrates for chemical vapor deposition of graphene. A metal thickness of 400 nm to 700 nm was sputtered onto a substrate of $\alpha-$Al$_2$O$_3$(0001) at temperatures of…
This paper is devoted to studying the recrystallization of 100 nm thick polycrystalline films of copper and silver. It is found that in copper films deposited by the thermal evaporation method onto a substrate at room temperature, a bimodal…
The microstructure of Bi2Se3 topological-insulator thin films grown by molecular beam epitaxy on InP(111)A and InP(111)B substrates that have different surface roughnesses has been studied in detail using X-ray diffraction, X-ray…
Ta films with tetragonal crystalline structure (beta-phase), deposited by magnetron sputtering on different substrates (steel, silicon and silicon dioxide), have been studied. In all cases, very highly preferred (001) orientation was…
Epitaxial Fe film has been grown on ion beam sputtered MgO(001) substrate by electron beam evaporation. Reflection high energy electron diffraction (RHEED) and transport measurements (TM) were performed simultaneously during the growth of…
We investigate the formation and the coarsening dynamics of islands in a strained epitaxial semi-conductor film. These islands are commonly observed in thin films undergoing a morphological instability due to the presence of the elasto…
We have grown lead iron niobate thin films with composition Pb(Fe1/2Nb1/2)O3 (PFN) on (0 0 1) SrTiO3 substrates by pulsed laser deposition. The influence of the deposition conditions on the phase purity was studied. Due to similar…
The effects of growth rate (G_r), deposition temperature (T_d), film thickness (t_F), and substrate induced strain (epsilon) on morphological, crystallographic and magnetic characteristics of equiatomic CoPt epitaxial films synthesized with…
Hf silicate films (HfO_2)_{0.25}(SiO_2)_{0.75} with thicknesses in the range 4-20 nm were grown on silicon substrate by atomic layer deposition at 350 deg.C.The Hf distributions in as-grown and 800 deg.C annealed films were investigated by…
We report the structural and electronic properties of niobium nitride (NbN) thin films grown by molecular beam epitaxy on c-plane sapphire with miscut angles of $0.5^\text{o}$, $2^\text{o}$, $4^\text{o}$, and $10^\text{o}$ towards m-axis.…
We use ultra-high vacuum chemical vapor deposition to grow polycrystalline silicon carbide (SiC) on c-plane sapphire wafers which are then annealed between 1250 and 1450{\deg}C in vacuum to create epitaxial multilayer graphene (MLG).…
Gold micro-mirrors have been formed in silicon in an inverted pyramidal shape. The pyramidal structures are created in the (100) surface of a silicon wafer by anisotropic etching in potassium hydroxide. High quality micro-mirrors are then…
This paper presents the experimental results on research of growth processes of GaAs layers on silicon substrates by molecular beam epitaxy. The formation of buffer Si layer in a single growth process has been found to significantly improve…