Related papers: Spin relaxation in a GaAs quantum dot embedded ins…
We theoretically study the $(1,1)$ triplet to $(0,2)$ singlet relaxation rate in a lateral gate-defined double quantum dot tuned to the regime of Pauli spin blockade. We present a detailed derivation of the effective phonon density of…
Spin-orbit mediated phonon relaxation in a two-dimensional quantum dot is investigated using different confining potentials. Elliptical harmonic oscillator and cylindrical well results are compared to each other in the case of a…
Spin relaxation via electron-phonon interaction is an important decoherence mechanism for spin qubits. In this work, we study spin relaxation in hexagonal (2H) germanium, a novel direct-gap semiconductor showing great potential to combine…
We investigate the singlet-triplet relaxation process of a two electron silicon quantum dot. In the absence of a perpendicular magnetic field, we find that spin-orbit coupling is not the main source of singlet-triplet relaxation. Relaxation…
The spin of a confined electron, when oriented originally in some direction, will lose memory of that orientation after some time. Physical mechanisms leading to this relaxation of spin memory typically involve either coupling of the…
Investigations of spin squeezing in ensembles of quantum particles have been limited primarily to a subspace of spin fluctuations and a single spatial mode in high-spin and spatially extended ensembles. Here, we show that a wider range of…
We study spin relaxation and decoherence caused by electron-lattice and spin-orbit interaction and predict striking effects induced by magnetic fields $B$. For particular values of $B$, destructive interference occurs resulting in ultralong…
We expand on previous work that treats relaxation physics of low-lying excited states in ideal, single electron, silicon quantum dots in the context of quantum computing. These states are of three types: orbital, valley, and spin. The…
Spin-polarized transport through quantum dots is analyzed theoretically in the cotunneling regime. It is shown that the zero-bias anomaly, found recently in the antiparallel configuration, can also exist in the case when one electrode is…
Spin related phenomena in quantum nanostructures have attracted recently much interest due to fast growing field of spintronics. In particular complex nanostructures are important as they provide a versatile system to manipulate spin and…
We report a systematic study of the spin relaxation anisotropy between single electron Zeeman sublevels in cuboidal GaAs quantum dots (QDs). The QDs are subject to an in-plane magnetic field. As the field orientation varies, the relaxation…
The spin relaxation of a two-dimensional electron system (2DES) formed in a symmetric quantum well is studied theoretically when the quantum well is parallel to the (110) plane of the zinc-blende structure, the spin polarization is…
We calculate spin relaxation rates in lateral quantum dot systems due to electron exchange between dots and leads. Using rate equations, we develop a theoretical description of the experimentally observed electric current in the spin…
The spin noise in singly charged self-assembled quantum dots is studied theoretically and experimentally under the influence of a perturbation, provided by additional photoexcited charge carriers. The theoretical description takes into…
We study theoretically the spin-flip relaxation processes for a single electron in a self-assembled InAs/GaAs quantum dot, using an 8-band kp theory in the envelope function approximation. We show that the dominating channel of spin…
We calculate the acoustic phonon-assisted exciton spin relaxation in single self-assembled In$_{1-x}$Ga$_x$As/GaAs quantum dots using an atomic empirical pseudopotential method. We show that the transition from bright to dark exciton states…
In this paper we report a relaxation-induced suppression of the noise for a single level quantum dot coupled to an oscillator with incoherent dynamics in the sequential tunneling regime. It is shown that relaxation induces qualitative…
We show that the spin-lattice relaxation in n-type insulating GaAs is dramatically accelerated at low magnetic fields. The origin of this effect, that cannot be explained in terms of well-known diffusion-limited hyperfine relaxation, is…
Spin inertia measurements are a novel experimental tool to study long-time spin relaxation processes in semiconductor nanostructures. We develop a theory of the spin inertia effect for resident electrons and holes localized in quantum dots.…
We advance spin noise spectroscopy to the ultimate limit of single spin detection. This technique enables the measurement of the spin dynamic of a single heavy hole localized in a flat (InGa)As quantum dot. Magnetic field and light…