Related papers: Effect of charge state in nearby quantum dots on q…
In the fractional quantum Hall effect regime we measure diagonal ($\rho_{xx}$) and Hall ($\rho_{xy}$) magnetoresistivity tensor components of two-dimensional electron system (2DES) in gated GaAs/Al$_{x}$Ga$_{1-x}$As heterojunctions,…
The advent of black phosphorus field-effect transistors (FETs) has brought new possibilities in the study of two-dimensional (2D) electron systems. In a black phosphorus FET, the gate induces highly anisotropic 2D electron and hole gases.…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
Development of new, high quality functional materials has been at the forefront of condensed matter research. The recent advent of two-dimensional black phosphorus has greatly enriched the material base of two-dimensional electron systems.…
The article shows a simple model that computes the magnetoconduction and the integer quantum Hall effect (IQHE) in a two-dimensional electron system (2DES) where the spin is other degree of freedom in the system. The 2DES is confined in a…
We investigated experimentally non-equilibrium state of a two-dimensional electron gas (2DEG) in the quantum Hall effect (QHE) regime, studying the hysteresis of magnetoresistance of a 2DEG with a constriction. The large amplitude of the…
We study the magnetotransport properties of dual-gated graphene bilayers, in which the total density and layer density imbalance are independently controlled. As the bilayer is imbalanced we observe the emergence of a quantum Hall state…
To fully appreciate the impacts that the discovery of the quantum Hall effect had on electrical metrology, it may benefit the reader to cultivate a general understanding of the phenomenon. Two-dimensional electron systems can exhibit many…
Up to know all the experimental results concerning the integer and fractional quantum Hall effect are related to semiconductor heterostructures (and more recently with graphene). The common characteristic of all these systems is the…
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quantum versions of the Hall effect and the spin…
We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical…
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures…
The quantum Hall effect (QHE) in two-dimensional (2D) electron gases, which is one of the most striking phenomena in condensed matter physics, involves the topologically protected dissipationless charge current flow along the edges of the…
Two-component systems with equal concentrations of electrons and holes exhibit non-saturating, linear magnetoresistance in classically strong magnetic fields. The effect is predicted to occur in finite-size samples at charge neutrality in…
The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous…
The cross-over from quasi-two- to quasi-one-dimensional electron transport subject to transverse electric fields and perpendicular magnetic fields are studied in the diffusive to quasiballistic and zero-field to quantum Hall regime.…
Nanoelectronic devices embedded in the two-dimensional electron system (2DES) of a GaAs/AlGaAs heterostructure enable a large variety of applications from fundamental research to high speed transistors. Electrical circuits are thereby…
We analyze the effect that the Coulomb interaction has on the edge excitations of an electron gas confined in a bar of thickness $W$, and in presence of a magnetic field corresponding to filling factor 1 Quantum Hall effect. We find that…
We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct…
The quantum Hall effect, which exhibits a number of unusual properties, is studied in a gated 1000-nm-thick HgTe film, nominally a three-dimensional system. A weak zero plateau of Hall resistance, accompanied by a relatively small value of…