Related papers: Concept of deterministic single ion doping with su…
We demonstrate a capability of deterministic doping at the single atom level using a combination of direct write focused ion beam and solid-state ion detectors. The focused ion beam system can position a single ion to within 35 nm of a…
The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which…
Single dopant atoms or dopant-related defect centers in a solid state matrix provide an attractive platform for quantum simulation of topological states, for quantum computing and communication, due to their potential to realize a scalable…
Single ion implantation using focused ion beam systems enables high spatial resolution and maskless doping for rapid and scalable engineering of materials for quantum technologies, particularly qubits and colour centres in solid-state…
The major challenges to fabricate quantum processors and future nano solid state devices are material modification techniques with nanometre resolution and suppression of statistical fluctuations of dopants or qubit carriers. Based on a…
Using a segmented ion trap with mK laser-cooled ions we have realised a novel single ion source which can deterministically deliver a wide range of ion species, isotopes or ionic molecules [Schnitzler et al., Phys. Rev. Lett. 102, 070501…
Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field…
The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of…
Several solid state quantum computer schemes are based on the manipulation of electron and nuclear spins of single donor atoms in a solid matrix. The fabrication of qubit arrays requires the placement of individual atoms with nanometer…
We present an alternative approach for interconnecting trapped ion processor nodes by a deterministic single ion transfer out of the trap, into a free space trajectory, followed by recapture in the trapping potential. Our experimental…
Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral…
We report on a deterministic single ion source with high repetition rate and high fidelity. The source employs a magneto-optical trap, where ultracold Rubidium atoms are photoionized. The electrons herald the creation of a corresponding…
Modifying material properties at the nanoscale is crucially important for devices in nanoelectronics, nanophotonics and quantum information. Optically active defects in wide band gap materials, for instance, are vital constituents for the…
We focus down an ion beam consisting of single 40Ca+ ions to a spot size of a few mum using an einzel-lens. Starting from a segmented linear Paul trap, we have implemented a procedure which allows us to deterministically load a…
Trapped-ion quantum technologies have been developed for decades toward applications such as precision measurement, quantum communication and quantum computation. Coherent manipulation of ions' oscillatory motions in an ion trap is…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
Single quantum emitters coupled to different plasmonic and photonic structures are key elements for integrated quantum technologies. In order to fully exploit these elements, e.g. for quantum enhanced sensors or quantum repeaters, a…
Nitrogen Vacancy (NV) centers in diamond are a platform for several important quantum technologies, including sensing, communication and elementary quantum processors. In this letter we demonstrate the creation of NV centers by implantation…
Having access to the chemical environment at the atomic level of a dopant in a nanostructure is crucial for the understanding of its properties. We have performed atomically-resolved electron energy-loss spectroscopy to detect individual…
We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart,…