Related papers: Quantum control of donor electrons at the Si-SiO2 …
Silicon spin qubits are promising candidates for building scalable quantum computers due to their nanometre scale features. However, delivering microwave control signals locally to each qubit poses a challenge and instead methods that…
A solid-state quantum computer with dipolar coupling between qubits is proposed. The qubits are formed by the low-lying states of an isolated acceptor in silicon. The system has the scalability inherent to spin-based solid state systems,…
The potential of Si and SiGe-based devices for the scaling of quantum circuits is tainted by device variability. Each device needs to be tuned to operation conditions. We give a key step towards tackling this variability with an algorithm…
A high degree of controllability and long coherence time make the nuclear spin of a phosphorus donor in isotopically purified silicon a promising candidate for a quantum bit. However, long-distance two-qubit coupling and fast, robust gates…
The realization of a quantum computer represents a tremendous scientific and technological challenge due to the extreme fragility of quantum information. The physical support of information, namely the quantum bit or qubit, must at the same…
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below the ionization regime in the presence of interfaces using Tight-binding and Band Minima Basis approaches and compared to the recent precision…
We study exchange coupling in Si double quantum dots, which have been proposed as suitable candidates for spin qubits due to their long spin coherence times. We discuss in detail two alternative schemes which have been proposed for…
Once called a "classically non-describable two-valuedness" by Pauli , the electron spin is a natural resource for long-lived quantum information since it is mostly impervious to electric fluctuations and can be replicated in large arrays…
We demonstrate an ion shuttling technique for high-resolution control of atom-ion collision energy by translating an ion held within a radio-frequency trap through a magneto-optical atom trap. The technique is demonstrated both…
Identifying, quantifying, and suppressing decoherence mechanisms in qubits are important steps towards the goal of engineering a quantum computer or simulator. Superconducting circuits offer flexibility in qubit design; however, their…
We fabricated silicon metal-oxide-semiconductor field effect transistors where an additional sodium-doped layer was incorporated into the oxide to create potential fluctuations at the Si-SiO2 interface. The amplitude of these fluctuations…
We propose a technique to design control algorithms for a class of finite dimensional quantum systems so that the control law does not present discontinuities. The class of models considered admits a group of symmetries which allows us to…
We explore electron transport properties in a quantum wire attached to two metallic electrodes. A simple tight-binding model is used to describe the system and the coupling of the wire to the electrodes (source and drain) is treated through…
Practical quantum computers require the construction of a large network of highly coherent qubits, interconnected in a design robust against errors. Donor spins in silicon provide state-of-the-art coherence and quantum gate fidelities, in a…
Control of hyperfine interactions is a fundamental requirement for quantum computing architecture schemes based on shallow donors in silicon. However, at present, there is lacking an atomistic approach including critical effects of…
The demonstration of universal quantum logic operations near the fault-tolerance threshold establishes ion-implanted near-surface donor atoms as a plausible platform for scalable quantum computing in silicon. The next technological step…
Electrons bound to the surface of liquid helium are an emerging quantum computing platform, offering the potential for highly mobile spin qubits that can be manipulated using CMOS-fabricated devices. Here, as a step toward realizing this…
The influence of the electric field created by a gate potential of the silicon quantum computer on the hyperfine interaction constant (HIC) is obtained. The errors due to technological inaccuracy of location of donor atoms under a gate are…
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance towards fault-tolerant implementations, but it poses substantial…
We predict a gigantically long lifetime of the first excited state of an interstitial lithium donor in silicon. The nature of this effect roots in the anomalous level structure of the {\em 1s} Li manifold under external stress. Namely, the…