Related papers: Atomically straight steps on vicinal Si (111) surf…
Semiconductor fabrication is a mainstay of modern civilization, enabling the myriad applications and technologies that underpin everyday life. However, while sub-10 nanometer devices are already entering the mainstream, the end of the…
Using total energy calculations, based on interaction potentials from the embedded atom method, we show that the presence of the tip not only lowers the barrier for lateral diffusion of the adatom towards it, but also shifts the…
The 10-nm-scale structure in silicon cleavage is studied by the quantum mechanical calculations for large-scale electronic structure. The cleavage process on the order of 10 ps shows surface reconstruction and step formation. These…
We explore the phase-dependent charge and heat current in the short Josephson junctions with two normal metal regions attached at opposite ends, formed at helical edge states of two-dimensional topological insulators (TIs). For all finite…
Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces…
Study on a rectified current induced by active particles has received a great attention due to its possible application to a microscopic motor in biological environments. Insertion of an {\em asymmetric} passive object amid many active…
Magneli phases of titanium dioxide (such as Ti4O7, Ti5O9, etc.) provide electronic properties, namely a stable metallic behavior at room temperature. In this manuscript, we demonstrate that nanoscopic Magneli phases, formed intrinsically in…
Self-phoretic Janus particles move by inducing -- via non-equilibrium chemical reactions occurring on their surfaces -- changes in the chemical composition of the solution in which they are immersed. This process leads to gradients in…
We use numerical simulations to study the shear-driven steady-state flow of athermal, frictionless, overdamped, two dimensional cross-shaped particles of varying aspect ratios, and make comparison with the behavior of rod-shaped and…
We approach the old-standing problem of vicinal crystal surfaces destabilized by step-down and step step-up currents from a unified modelling viewpoint with focus on both the initial and the intermediate stages of the instability. We…
A discrete version of deposition-diffusion equations appropriate for description of step flow on a vicinal surface is analyzed for a two-dimensional grid of adsorption sites representing the stepped surface and explicitly incorporating…
We study a dynamical model of a rod-like particle surrounded by a cloud of smaller particles of the same charge and we show that, in the presence of a low-frequency alternating electric field, the rod displays the same type of anomalous…
The structural and compositional stabilities of two dimensional 2D Bi2Te3 and Bi2Se3 nanocrystals, produced by both colloidal synthesis and by liquid phase exfoliation, were studied by in situ transmission electron microscopy TEM during…
The interaction of spin-polarized one-dimensional (1D) topological edge modes localized along single-atomic steps of the topological crystalline insulator $Pb_{0.7}Sn_{0.3}Se(001)$ has been studied systematically by scanning tunneling…
Using molecular dynamics simulations, we show that an asymmetrically shaped nanoparticle in dilute solution possesses a spontaneously curved trajectory within finite time interval, instead of the generally expected random walk. This…
Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder,…
We demonstrate the existence of atomically-sized topological solitons in a quasi one-dimensional charge density wave system: indium atomic wires on Si(111). Performing joint scanning tunneling microscopy and density-functional calculations,…
InN nanowires were grown on Si<111> and Si<100> substrates by plasma-assisted molecular beam epitaxy using a thin AlN buffer layer at temperatures compatible with the thermal budget limitation imposed by Back-End-Of-Line processing.…
This paper explores the electrical and thermal conductivity of complex contact spots on the surface of a half-space. Employing an in-house Fast Boundary Element Method implementation, various complex geometries were studied. Our…
This is a review of recent theoretical work on complex dynamical behavior of steps on crystal surfaces. The first part of the article is devoted to the electromigration-driven motion of islands and voids, and the second part addresses step…