Related papers: Two-dimensional electrons at a cleaved semiconduct…
We study the Hall constant in a homogeneous two-dimensional fluid of correlated electrons immersed in a perpendicular magnetic field, with special focus on the regime of low carrier density. The model consists of a one-band tight-binding…
InAs/GaSb heterostructure is one of the systems where quantum spin Hall effect is predicted to arise. However, as confirmed by recent experimental studies, the most significant highlight of the effect i.e., the conductance quantization due…
We report the observation of metallic-like behavior at low temperatures and zero magnetic field in two dimensional (2D) electrons in an AlAs quantum well. At high densities the resistance of the sample decreases with decreasing temperature,…
We measure the effective mass (m*) of interacting two-dimensional electrons confined to a 4.5 nm-wide AlAs quantum well. The electrons in this well occupy a single out-of-plane conduction band valley with an isotropic in-plane Fermi…
The quantum Hall effect was originally observed in a two-dimensional electron gas forming Landau levels when exposed to a strong perpendicular magnetic field and was later generalized to Chern insulators without net magnetization. Here,…
We numerically investigate the interplay of disorder and electron-electron interactions in the integer quantum Hall effect. In particular, we focus on the behaviour of the electronic compressibility as a function of magnetic field and…
We report on the magnetoconductivity of quasi two-dimensional electron systems in inversion layers on p-type InAs single crystals. In low magnetic fields pronounced features of weak localization and antilocalization are observed. They are…
The nonlinear behavior of the Hall resistivity at low magnetic fields in single quantum well GaAs/In$_x$Ga$_{1-x}$As/GaAs heterostructures with degenerated electron gas is studied. It has been found that this anomaly is accompanied by the…
We study the quantum Hall states in the lowest Landau level for a single wide quantum well. Due to a separation of charges to opposite sides of the well, a single wide well can be modelled as an effective two level system. We provide…
We discuss quantum Hall effect in the presence of arbitrary pair interactions between electrons. It is shown that irrespective of the interaction strength the Hall conductivity is given by the filling fraction of Landau levels averaged over…
Quantum wells constitute one of the most important classes of devices in the study of 2D systems. In a double layer QW, the additional "which-layer" degree of freedom gives rise to celebrated phenomena such as Coulomb drag, Hall drag and…
The two-dimensional surface of a coupled multilayer integer quantum Hall system consists of an anisotropic chiral metal. This unusual metal is characterized by ballistic motion transverse and diffusive motion parallel (\hat{z}) to the…
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter…
We report on the properties of a system of interacting electrons in a narrow channel in the quantum Hall effect regime. It is shown that an increase in the strength of the Coulomb interaction causes abrupt changes in the width of the…
We have realized an AlAs two-dimensional electron system in which electrons occupy conduction-band valleys with different Fermi contours and effective masses. In the quantum Hall regime, we observe both resistivity spikes and persistent…
The two-dimensional electron system in (110)Al$_2$O$_{3-\delta}$/SrTiO$_3$ heterostructures displays anisotropic electronic transport. Largest and lowest conductivity and electron mobility $\mu$ are observed along the $[001]$ and…
In a two-dimensional electron gas as realized by a semiconductor quantum well, the presence of spin-orbit coupling of both the Rashba and Dresselhaus type leads to anisotropic dispersion relations and Fermi contours. We study the effect of…
We discuss the mechanism of anomalous Hall effect related to the contribution of electron states below the Fermi surface (induced by the Berry phase in momentum space). Our main calculations are made within a model of two-dimensional…
Recent experiments reveal that the strained bulk HgTe can be regard as a three-dimensional topological insulator (TI). Motivated by this, we explore the strain effects on the magnetotransport properties of the HgTe surface states at…
In this work we report experiments on defined by shallow etching narrow Hall bars. The magneto-transport properties of intermediate mobility two-dimensional electron systems are investigated and analyzed within the screening theory of the…