Related papers: Complete spin extraction from semiconductors near …
In semiconductors, spin-orbit effective magnetic fields, i.e., the Rashba and Dresselhaus fields, are used to control electron-spin polarization. This operation, however, destroys the electron-spin coherence, and the spin polarization is…
We investigate the charge and spin transport in half-metallic ferromagnet ($F$) and superconductor ($S$) nanojunctions. We utilize a self-consistent microscopic method that can accommodate the broad range of energy scales present, and…
Efficient injection of spin-polarized electrons into the conduction band of silicon is limited by the formation of a silicide at the ferromagnetic metal (FM)/silicon interface. In the present work, this "magnetically-dead" silicide (where…
We investigate the electron transport through a two-dimensional semiconductor with a nonuniform Rashba spin-orbit interaction. Due to the combination of the coherence effect and the Rashba interaction, a spontaneous spin-polarized current…
Current-voltage characteristics of a spintromechanical device, in which spin-polarized electrons tunnel between magnetic leads with anti-parallel magnetization through a single level movable quantum dot, are calculated. New exchange- and…
We have studied theoretically the electron spin relaxation in semiconductor quantum dots via interaction with nuclear spins. The relaxation is shown to be determined by three processes: (i) -- the precession of the electron spin in the…
The spin filtering effect of the electron current in a double-barrier resonant-tunneling diode (RTD) consisting of ZnMnSe semimagnetic layers has been studied theoretically. The influence of the distribution of the magnesium ions on the…
The tunneling splitting of the energy levels of a ferromagnetic particle in the presence of an applied magnetic field - previously derived only for the ground state with the path integral method - is obtained in a simple way from…
Thermoelectric effects result from the coupling of charge and heat transport, and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron-hole symmetry,…
Spin-split superconductors exhibit an electron-hole asymmetric spin-resolved density of states, but the symmetry is restored upon averaging over spin. On the other hand, asymmetry appears again in tunneling junctions of spin-split…
We investigated the transport properties in a normal metal/ferromagnet/normal metal/superconductor junction based on semi-Dirac materials with inverted energy gap. With a scattering matrix approach, we show that the electron transport in…
Electrically controlled rotation of spins in a semiconducting channel is a prerequisite for the successful realization of many spintronic devices, like, e.g., the spin field effect transistor (sFET). To date, there have been only a few…
It is shown that, for appropriate values of electron energy, the silicene dot can work as a controllable spin polarizer. The spin polarizer can polarize the spin of transmitted electrons from nearly pure down to nearly pure up by changing…
We show that the degree of spin polarization of photoelectrons from the surface states of topological insulators is 100% if fully-polarized light is used as in typical photoemission measurements, and hence can be significantly "higher" than…
We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…
Efficient conversion of a spin signal into an electric voltage in mainstream semiconductors is one of the grand challenges of spintronics. This process is commonly achieved via a ferromagnetic tunnel barrier where non-linear electric…
We propose a new method of direct detection of spin accumulation, which overcomes problems of previous measurement schemes. A spin dependent current in a single-electron transistor with ferromagnetic electrodes leads to spin accumulation on…
A domain wall separating two oppositely magnetized regions in a ferromagnetic semiconductor exhibits, under appropriate conditions, strongly nonlinear I-V characteristics similar to those of a p-n diode. We study these characteristics as…
We study the effect of the electron-electron interaction on the transport of spin polarized currents in metals and doped semiconductors in the diffusive regime. In addition to well-known screening effects, we identify two additional…
In a thin strip of a two-dimensional semiconductor electronic system, spin-orbit coupling may be induced near both edges of the strip due to the substantial spatial variation of the confining potential in the boundary regions. In this paper…