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Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing (Vside). The subthreshold slope (SS) and drain…
Multi-controlled single-target (MC) gates are some of the most crucial building blocks for varied quantum algorithms. How to implement them optimally is thus a pivotal question. To answer this question in an architecture-independent manner,…
Dynamic Monte Carlo simulations are used to study coupled transport (co-transport) through sub-nanometer-diameter pores. In this classic Hodgkin-Keynes mechanism, an ion species uses the large flux of an abundant ion species to move against…
The lattice gas model for adsorption of alkaline elements on W(112) surface is studied by Monte Carlo simulations. The model includes dipole--dipole interaction as well as long-range indirect interaction. The numerical results show that…
The first inversion-mode gate-all-around (GAA) III-V MOSFETs are experimentally demonstrated with a high mobility In0.53Ga0.47As channel and atomic-layer-deposited (ALD) Al2O3/WN gate stacks by a top-down approach. A well-controlled InGaAs…
The design of new x-ray phase contrast imaging setups often relies on Monte Carlo simulations for prospective parameter studies. Monte Carlo simulations are known to be accurate but time consuming, leading to long simulation times,…
Imbalanced voltage sharing during the turn-off transient is a challenge for series-connected silicon carbide (SiC) MOSFET application. This article first discusses the influence of the gate-drain discharge deviation on the voltage imbalance…
A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot…
Local control of superconducting circuits by high-impedance electrical gates offers potential advantages in superconducting logic, quantum processing units, and cryoelectronics. Recent experiments have reported gate-controlled supercurrent…
We present a case-study on the utility of graphics cards to perform massively parallel simulation of advanced Monte Carlo methods. Graphics cards, containing multiple Graphics Processing Units (GPUs), are self-contained parallel…
We elucidate the origin of large differences (two-fold or more) in the fixed-node errors between the first- vs second-row systems for single-configuration trial wave functions in quantum Monte Carlo calculations. This significant difference…
The Monte Carlo (MC) simulation method is a powerful tool for radiation physicists, and several general-purpose software packages are commonly applied in a myriad of different radiation physics fields today. In medical physics, charged…
A detailed simulation of vertical showers in atmosphere produced by primary gammas and protons, in the energy range 1-100 TeV, has been performed by means of the FLUKA Monte Carlo code, with the aim of studying the time structure of the…
We study the achievements of quantum circuits comprised of several one- and two-qubit gates. Quantum process matrices are determined for the basic one- and two-qubit gate operations and concatenated to yield the process matrix of the…
This work systematically compares parallel implementations of consistent (asymptotically unbiased) Bayesian deep learning algorithms: sequential Monte Carlo sampler (SMC$_\parallel$) or Markov chain Monte Carlo (MCMC$_\parallel$). We…
We study the adsorption of primitive model electrolytes into a layered slit system using grand canonical Monte Carlo simulations. The slit system contains a series of charged membranes. The ions are forbidden from the membranes, while they…
We report on a diffusion Monte Carlo investigation of model electron systems in low dimensions, which should be relevant to the physics of systems obtainable nowadays in semiconductor heterostructures. In particular, we present results for…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
The Short-Time approximation is a method introduced to evaluate electroweak nuclear response for systems with $A\geq12$, extending the reach of first-principle many-body Quantum Monte Carlo calculations. Using realistic two- and three-body…
We develop a parallel rejection algorithm to tackle the problem of low acceptance in Monte Carlo methods, and apply it to the simulation of the hopping conduction in Coulomb glasses using Graphics Processing Units, for which we also…