Related papers: Spin filtering through ferromagnetic BiMnO3 tunnel…
Spin-resolved electron symmetry filtering is a key mechanism behind giant tunneling magnetoresistance (TMR) in Fe/MgO/Fe and similar magnetic tunnel junctions (MTJs), providing room temperature functionality in modern spin electronics.…
A systematic microscopic theory of magnetically induced ferroelectricity and lattice modulation is presented for all electron configurations of Mott-insulating transition-metal oxides. Various mechanisms of polarization are identified in…
Nuclear magnetic resonance (NMR) and transport measurements have been performed at high magnetic fields and low temperatures in a series of $n$-type Bi$_{2}$Se$_{3}$ crystals. In low density samples, a complete spin polarization of the…
Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and…
By combining genetic algorithm optimizations, first-principles calculations and the double-exchange model studies, we have unveiled that the exotic insulating ferromagnetism in LaMnO3 thin film originates from the previously unreported…
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the…
CaMnO3 is a simple bi-partite antiferromagnet(AF) which can be continuously electron-doped up to LaMnO3. Electrons enter the doubly degenerate E_g subshell with spins aligned to the S=3/2 core of Mn^4+ (T_2g^3)$. We take the Hubbard and…
The spin filtering effect of the electron current in a double-barrier resonant-tunneling diode (RTD) consisting of ZnMnSe semimagnetic layers has been studied theoretically. The influence of the distribution of the magnesium ions on the…
Electrical manipulation of spins is essential to design state-of-the-art spintronic devices and commonly relies on the spin current injected from a second heavy-metal material. The fact that chiral antiferromagnets produce spin current…
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…
We investigate electronic thermal rectification in ferromagnetic insulator-based superconducting tunnel junctions. Ferromagnetic insulators coupled to superconductors are known to induce sizable spin splitting in the superconducting density…
We report a strong effect of interface-induced magnetization on the transport properties of magnetic tunnel junctions consisting of ferromagnetic manganite La$_{0.7}$Ca$_{0.3}$MnO$_{3}$ and insulating cuprate PrBa$_{2}$Cu$_{3}$O$_{7}$.…
SrMnO$_{3}$ (SMO) is a magnetic insulator and predicted to exhibit a multiferroic phase upon straining. Strained films of SMO display a wide range of magnetic orders, ranging from G-type to C-and A-type, indicative of competing magnetic…
Transition-metal oxides (TMOs) exhibit many emergent phenomena ranging from high-temperature super- conductivity and giant magnetoresistance to magnetism and ferroelectricity. When TMOs are interfaced with each other, new…
By measuring electron tunneling between a ferromagnet and individual energy levels in an aluminum quantum dot, we show how spin-resolved quantum states can be used as filters to determine spin-dependent tunneling rates. We also observe…
A collective excitation of the spin structure in a magnetic insulator can transmit spin-angular momentum with negligible dissipation. This quantum of a spin wave, introduced more than nine decades ago, has always been manipulated through…
We report on the growth of epitaxial bilayers of the La2/3Sr1/3MnO3 (LSMO) half-metallic ferromagnet and the BiFeO3 (BFO) multiferroic, on SrTiO3(001) by pulsed laser deposition. The growth mode of both layers is two-dimensional, which…
This thesis predicts that two types of material families could be a solution to the challenges in spintronics: complex oxides and bismuth based materials. We derive a general approach for constructing an effective spin-orbit Hamiltonian,…
Bulk BiMnO$_3$ is the only transition-metal perovskite oxide that is insulating and shows strong ferromagnetism. This distinctive behavior would make it a promising candidate as a magnetoelectric multiferroic if it was also a polar…
We present results on the magnetoresistance of the system Ni/Al203/n-doped Si/Al2O3/Ni in fabricated nanostructures. The results at temperature of 14K reveal a 75% magnetoresistance that decreases in value up to approximately 30K where the…