Related papers: Exciton lifetime in InAs/GaAs quantum dot molecule…
We present photoluminescence studies of the molecular neutral biexciton-exciton spectra of individual vertically stacked InAs/GaAs quantum dot pairs. We tune either the hole or the electron levels of the two dots into tunneling resonances.…
We demonstrate room temperature visible wavelength photoluminescence from In0.5Ga0.5As quantum dots embedded in a GaP membrane. Time-resolved above band photoluminescence measurements of quantum dot emission show a biexpontential decay with…
We report the fabrication and photoluminescence properties of laterally-coupled GaAs/AlGaAs quantum dots. The coupling in the quantum dot molecules is tuned by an external electric field. An intricate behavior, consisting of spectral line…
We investigate the exciton complexes photoluminescence, dynamics and photon statistics in the concurrent strong weak coupling regime in our unique site controlled singular inverted pyramidal InGaAs/GaAs quantum dots photonic crystal…
An accurate calculation of the exciton ground and excited states in AlGaAs and InGaAs coupled quantum wells (CQWs) in an external electric field is presented. An efficient and straightforward algorithm of solving the Schrodinger equation in…
Hybrid structures incorpora1ng both III-nitride and Transi1on Metal Dichalcogenide (TMD) semiconductors have strong applica1on poten1al for light harves1ng and optoelectronics. Here we have inves1gated the proper1es of hybrid structures…
Excitation of ionic solids with extreme ultraviolet pulses creates localized core-excitons, which in some cases couple strongly to the lattice. Here, core-excitonic states of magnesium oxide are studied in the time domain at the Mg…
We calculate the radiative lifetime and energy bandstructure of excitons in semiconducting carbon nanotubes, within a tight-binding approach. In the limit of rapid interband thermalization, the radiative decay rate is maximized at…
We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy. Low-temperature microphotoluminescence spectroscopy shows emission from single QDs…
We investigate experimentally and theoretically the resonant emission of single InAs/GaAs quantum dots in a planar microcavity. Due to the presence of at least one residual charge in the quantum dots, the resonant excitation of the neutral…
We report on the carrier dynamics in InGaN/GaN disk-in-a-wire quantum dots with precisely controlled location and structural parameters, including diameter, thickness and material composition. We measured the time-integrated and…
In semiconductor quantum dots, the electron hyperfine interaction with the nuclear spin bath is the leading source of spin decoherence at cryogenic temperature. Using high-resolution two-color differential transmission spectroscopy, we…
The strong confinement of semiconductor excitons in a quantum dot gives rise to atom-like behavior. The full benefit of such a structure is best observed in resonant excitation where the excited state can be deterministically populated and…
The exciton decay rate at a rough interface in type-II semiconductor superlattices is investigated. It is shown that the possibility of recombination of indirect excitons at a plane interface essentially affects kinetics of the exciton…
Exciton, trion and biexciton dephasing rates are measured within the inhomogeneous distribution of an InAs quantum dot (QD) ensemble using two-dimensional Fourier-transform spectroscopy. The dephasing rate of each excitonic state is similar…
We present Purcell-enhanced ($F_\mathrm{P}>25$) semiconductor InAs quantum dot decay times of $T_1<30\,$ps, enabled by deterministic hybrid circular Bragg gratings (hCBGs). We investigate the benefits of these short $T_1$ times on the…
We study the relaxation of the exciton spin (longitudinal relaxation time $T_{1}$) in single asymmetrical quantum dots due to an interplay of the short--range exchange interaction and acoustic phonon deformation. The calculated relaxation…
Exciton fine structures in cubic III-V semiconductor GaAs, InAs and GaN quantum dots are investigated systematically and the exciton spin relaxation in GaN quantum dots is calculated by first setting up the effective exciton Hamiltonian.…
The generation of indistinguishable single photons is a fundamental requirement for future quantum technologies, particularly in quantum repeater networks and for distributed quantum computing based on entanglement distribution. However,…
Quantum-dot-in-nanowire systems constitute building blocks for advanced photonics and sensing applications. The electronic symmetry of the emitters impacts their function capabilities. Here, we study the fine structure of gallium-rich…