Related papers: A controllable nanomechanical memory element
Strong coupling between electronic and mechanical degrees of freedom is a basic requirement for the operation of any nanoelectromechanical device. In this Review we consider such devices and in particular investigate the properties of small…
Solid state spin qubits are promising candidates for quantum information processing, but controlled interactions and entanglement in large, multi-qubit systems are currently difficult to achieve. We describe a method for programmable…
Neuro-symbolic artificial intelligence (AI) excels at learning from noisy and generalized patterns, conducting logical inferences, and providing interpretable reasoning. Comprising a 'neuro' component for feature extraction and a 'symbolic'…
Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress…
Non-volatile resistive switching is demonstrated in memristors with nanocrystalline molybdenum disulfide (MoS$_2$) as the active material. The vertical heterostructures consist of silicon, vertically aligned MoS$_2$ and chrome / gold metal…
We propose a multi-mode quantum memory protocol able to store the quantum state of the field in a microwave resonator into an ensemble of electronic spins. The stored information is protected against inhomogeneous broadening of the spin…
The demand for cryogenic memory components is driven by the need for ultra-fast, low-power, and highly reliable computing systems. Phase slip-based devices promise to fulfill all these requirements, with potential applications in both…
Silicon on insulator photonics has offered a versatile platform for the recent development of integrated optomechanical circuits. However, there are some constraints such as the high cost of the wafers and limitation to a single physical…
We demonstrate a first order metal-insulator phase transition in the repulsive, fully frustrated, single-band Hubbard model as a function of the coupling to a fermion bath. Time dependent manipulation of the bath coupling allows switching…
Heavy computational demands from artificial intelligence (AI) leads the research community to explore the design space for functional materials that can be used for high performance memory and neuromorphic computing hardware. Novel device…
Recent advances in silicon foundry-process compatible ferroelectric (FE) thin films have reinvigorated interest in FE-based non-volatile memory (NVM) devices. Ferroelectric diodes (FeDs) are two-terminal NVM devices exhibiting rectifying…
The development of superconducting electronics based on nanocryotrons has been limited so far to few-device circuits, in part due to the lack of standard and robust logic cells. Here, we introduce and experimentally demonstrate designs for…
Solid-state spin defects, such as color centers in diamond, are among the most promising candidates for scalable and integrated quantum technologies. In particular, the good optical properties of silicon-vacancy centers in diamond combined…
The relaxation of stochastic systems after sudden perturbations is constrained by speed limits and often reveals memory effects that hinder attempts to accelerate their dynamics. Here we demonstrate Kovacs-type nonmonotonic relaxation in…
Quantum coherence control is presented for wavelength convertible quantum memory in a double-lambda-type solid ensemble whose spin states are inhomogeneously broadened. Unlike typical atomic media whose spin decay is homogeneous, a spin…
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic…
Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a…
Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While…
The rapid development of artificial intelligence (AI), Internet of Things (IoT), and edge computing applications has posed severe challenges to conventional memory technologies in terms of density, speed, and energy consumption. Herein, a…
Resistive-switching memories are alternative to Si-based ones, which face scaling and high power consumption issues. Tetrahedral amorphous carbon (ta-C) shows reversible, non-volatile resistive switching. Here we report polarity independent…