Related papers: Anomalous Spin Polarization of GaAs Two-Dimensiona…
Magnetoluminescence of spatially indirect dipolar excitons collected in 25 nm GaAs/AlGaAs single quantum well within a lateral potential trap has been studied in perpendicular magnetic field in Faraday geometry. The paramagnetic spin…
Spin current of two-dimensional holes occupying the ground-state subband in an asymmetric quantum well and interacting with static disorder potential is calculated in the presence of a weak magnetic field H perpendicular to the well plane.…
We report conductance measurements of a ballistic one-dimensional (1D) wire defined in the lower two-dimensional electron gas of a GaAs/AlGaAs double quantum well. At low temperatures there is an additional structure at $0.7(2e^2/h)$ in the…
Predicting magnetism originating from 2$p$ orbitals is a delicate problem, which depends on the subtle interplay between covalency and Hund's coupling. Calculations based on density functional theory and the local spin density approximation…
Electrically defined semiconductor quantum dots are attractive systems for spin manipulation and quantum information processing. Heavy-holes in both Si and GaAs are promising candidates for all-electrical spin manipulation, owing to the…
We have fabricated AlGaAs/GaAs heterostructure devices in which the conduction channel can be populated with either electrons or holes simply by changing the polarity of a gate bias. The heterostructures are entirely undoped, and carriers…
Magnetic impurities play an important role in many spintronics-related materials. Motivated by this fact, we study the anomalous Hall effect in the presence of magnetic impurities, focusing on two-dimensional electron systems with Rashba…
In disordered systems, the hopping conductivity regime is usually realized at low temperatures where spin-related phenomena differ strongly from the case of delocalized carriers. We develop the unified microscopic theory of current induced…
We apply the method of the non-equilibrium statistical operator in order to describe the magneto-electric effect in 2D electron system with the spin-orbit interaction, and find the polarization of spins of the charge carriers in quantizing…
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…
We report on a systematic study of the density dependence of mobility in a low-density Carbon-doped (100) GaAs two-dimensional hole system (2DHS). At T= 50 mK, a mobility of 2.6 x 10^6 cm^2/Vs at a density p=6.2 x 10^10 cm^- was measured.…
The transport properties of interacting electrons for which the spin degree of freedom is taken into account are numerically studied for small two dimensional diffusive clusters. On-site electron-electron interactions tend to delocalize the…
We report on spin injection experiments at a Co/Al$_2$O$_3$/GaAs interface with electrical detection. The application of a transverse magnetic field induces a large voltage drop $\Delta V$ at the interface as high as 1.2mV for a current…
We develop a theory for frictional drag between two 2D hole layers in a dilute bilayer GaAs hole system, including effects of hole-hole and hole-phonon interactions. Our calculations suggest significant enhancement of hole drag…
Spin-Hall effect in ballistic 2D electron gas with Rashba-type spin-orbit coupling and smooth edge confinement is studied. We predict that the interplay of semiclassical electron motion and quantum dynamics of spins leads to several…
We present an exact diagonalization study of the dynamical spin and density correlation function of the 2D t-J model for hole doping < 25%. Both correlation functions show a remarkably regular, but completely different scaling behaviour…
We study the effect of magnetic field on the properties of a high mobility gated two-dimensional electron gas in a field effect transistor with the Hall bar geometry. When approaching the current saturation when the drain side of the…
The spin-orbit interaction generally leads to spin splitting (SS) of electron and hole energy states in solids, a splitting that is characterized by a scaling with the wavevector $\bf k$. Whereas for {\it 3D bulk zincblende} solids the…
Experiments on a constant-density two-dimensional hole system in a GaAs quantum well reveal that the metallic behavior observed in the zero-magnetic-field temperature dependence of the resistivity depends on the symmetry of the confinement…
We identify a sizable non-linear anomalous Hall effect in the electrical response of spin-3/2 heavy holes in zincblende semiconductor nanostructures. The response is driven by a quadrupole interaction with the electric field enabled by…