Related papers: Giant Electroresistance in Ferroelectric Tunnel Ju…
Charging effects in mesoscopic junctions suppress the tunneling of electrons. In normal metal - superconductor systems they also suppress the proximity effect, thereby revealing the nature of the microscopic processes and of the ground…
Altermagnets can replace ferromagnets in tunnel junctions, yielding large tunneling magnetoresistance, ultrafast switching, and low-power functionality. While most studies explore the linear-response regime, interesting features emerge at…
The escalating demand for memory scaling requires switching mechanisms that remain reliable at atomic thickness while operating with minimal energy consumption. Sliding ferroelectricity provides a promising platform for this challenge: the…
We study tunneling currents in a model consisting of two non-unitary ferromagnetic spin-triplet superconductors separated by a thin insulating layer. We find a novel interplay between ferromagnetism and superconductivity, manifested in the…
We study tunneling currents in a model consisting of two non-unitary ferromagnetic spin-triplet superconductors separated by a thin insulating layer. We find a novel interplay between ferromagnetism and superconductivity, manifested in the…
Utilizing Co/Al$_2$O$_3$/Co magnetic tunnel junctions (MTJs) with Co electrodes of different crystalline phases, a clear relationship between electrode structure and junction transport properties is presented. For junctions with one…
Superconductor-ferromagnet tunnel junctions demonstrate giant thermoelectric effects which are being exploited to engineer ultra-sensitive terahertz radiation detectors. Here, we experimentally observe the recently predicted complete…
We study electron tunneling through two small ferromagnetic dots. Quantum charge fluctuations and interdot coupling make each Coulomb peak of the conductance at zero interdot coupling split across. The interdot tunnel coupling is determined…
Tunneling of electrons through the barriers in heterostructures has been studied, within unified transfer matrix approach. The effect of barrier width on the transmission coefficient of the electrons has been investigated for different…
The cross-unitcell long displacements in some recent emergent ferroelectrics have actually challenged the classical definition of ferroelectricity, while the relative explorations are still in the early stage and even controversial. In this…
For spin-polarized junctions of ferromagnetically contacting multiple conductive paths, such as ferromagnet (FM)/atomic wires/FM and FM/carbon nanotubes/FM junctions, we theoretically investigate spin-dependent transport to elucidate the…
With the recent experimental verification that ferroelectric lattice distortions survive in the metallic phase of some materials, there is a desire to create devices that are both switchable and take advantage of the novel functionalities…
We present microscopic results on the giant tunneling magnetoresistance that arises from the nanoscale coexistence of ferromagnetic metallic (FMM) and antiferromagnetic insulating (AFI) clusters in a disordered two dimensional electron…
In the linear regime, thermo-electric effects between two conductors are possible only in the presence of an explicit breaking of the electron-hole symmetry. We consider a tunnel junction between two electrodes and show that this condition…
We present a theoretical study of spin-dependent transport through a ferromagnetic domain wall. With an increase of the number of components of the exchange coupling, we have observed that the variance of the conductance becomes half. As…
By use of first-principles electronic structure calculations, we predict that the magnetoresistance of the bcc Co(100)/MgO(100)/bcc Co(100) and FeCo(100)/MgO(100)/FeCo(100) tunneling junctions can be several times larger than the very large…
Magnetism and transport are two key functional ingredients in modern electronic devices. In oxide heterostructures, ferroelectricity can provide a new route to control these two properties via electrical operations, which is scientifically…
We consider a superlattice of parallel metal tunnel junctions with a spatially non-homogeneous probability for electrons to tunnel. In such structures tunneling can be accompanied by electron scattering that conserves energy but not…
The electrical resistance of ferromagnetic/normal-metal (F/N) heterostructures depends on the nature of the junctions which may be tunnel barriers, point contacts, or intermetallic interfaces. For all junction types, the resistance of…
Van der Waals (vdW) heterostructures have opened new opportunities to develop atomically thin (opto)electronic devices with a wide range of functionalities. The recent focus on manipulating the interlayer twist angle has led to the…