Related papers: Current induced magnetization switching in exchang…
This paper describes a numerical experiment of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). Differently from other works, the current density distribution throughout the…
The mechanisms of the magnetization switching of magnetic multilayers driven by a current are studied by including exchange interaction between local moments and spin accumulation of conduction electrons. It is found that this exchange…
Theoretically, we study the dynamics of a current induced domain wall in the bi-layer structure consists of a ferromagnetic layer and a non-magnetic metal layer with strong spin-orbit coupling in the presence of spin-Hall effect. The…
We explore proximity effects on transition metal dichalcogenide ribbons deposited on antiferromagnetic (AFM) insulating substrates. We model these hybrid heterostructures using a tight-binding model that incorporates exchange and Rashba…
Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of…
We have studied the interaction between magnetism and superconductivity in a pseudo-spin-valve structure consisting of a Co/Cu/Py/Nb layer sequence. We are able to control the magnetization reversal process and monitor it by means of the…
We have studied the ground state phase diagram of a spin ladder with alternating rung exchange $J^{n}_{\perp} = J_{\perp}[1 + (-1)^{n} \delta ]$ in a magnetic filed, in the limit where the rung coupling is dominant. In this limit the model…
Using fully self consistent methods, we study spin transport in realistic, fabricable experimental spin valve systems consisting of two magnetic layers, a superconducting layer, and a spacer normal layer between the ferromagnets. Our…
Perpendicular magnetic tunnel junctions based on MgO/CoFeB structures are of particular interest for magnetic random-access memories because of their excellent thermal stability, scaling potential, and power dissipation. However, the major…
We investigate the potential to use a magneto-thermo-electric instability that may be induced in a mesoscopic magnetic multi-layer (F/f/F) to create and control magnetic superstructures. In the studied multilayer two strongly ferromagnetic…
We present a method to measure the effective field contribution to spin-transfer-induced interactions between the magnetic layers in a trilayer nanostructure, which enables spin-current effects to be distinguished from the usual…
We present a theoretical study on the spin-dependent transport through a spin valve consisting of graphene sandwiched between two magnetic leads with an arbitrary orientation of the lead magnetization. No gate voltage is applied. Using…
We study the stability of magnetization precessions induced in spin-transfer devices by the injection of spin-polarized electric currents. Instability conditions are derived by introducing a generalized, far-from-equilibrium interpretation…
Carbon-based molecular semiconductors are explored for application in spintronics because their small spin-orbit coupling promises long spin life times. We calculate the electronic transport from first principles through spin valves…
Magnetization behavior of long nanowires with square cross-section under influence of strong perpendicular spin-polarized current is studied theoretically. The study is based on Landau-Lifshitz-Slonczewski phenomenology. In the no current…
In-situ, device level measurement of thermal mag-noise spectral linewidths in 60nm diameter CPP-GMR spin-valve stacks of IrMn/ref/Cu/free, with reference and free layer of similar CoFe/CoFeGe alloy, are used to simultaneously determine the…
We summarize our recent findings on how current-driven magnetization switching and magnetoresistance in nanofabricated magnetic multilayers are affected by varying the spin-scattering properties of the non-magnetic spacers, the relative…
We describe a technique, using the current-perpendicular-to-plane (CPP) geometry, to measure the parameter delta(F/N), characterizing flipping of electron spins at a ferromagnetic/non-magnetic (F/N) metallic interface. The technique…
A study of transverse tail-to-tail magnetic domain walls (DW) in novel current perpendicular to the plane (CPP) spin valves (SV) of various dimensions is presented. For films with dimensions larger than the DW width, we find that DW motion…
We theoretically investigate spin dependent transport in ferromagnetic/normal metal/ferromagnetic single electron transistors by applying master equation calculations using a two dimensional space of states involving spin and charge degrees…