Related papers: Quantum Transport in Semiconductor Nanostructures
It has been recently shown that a nanostructure composed of a quantum dot surrounded by a quantum ring possesses a set of very unique characteristics that make it a good candidate for future nanoelectronic devices. Its main advantage is the…
We apply the semiclassical theory of transport to quantum dots with exact and approximate spatial symmetries; left-right mirror symmetry, up-down mirror symmetry, inversion symmetry or four-fold symmetry. In this work - the first of a pair…
Bandstructure effects in PMOS transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 20-band sp3d5s* spin-orbit-coupled (SO) atomistic tight-binding model coupled to…
Semiconductor InSb nanowires present a highly intriguing platform with immense potential for applications in spintronics and topological quantum devices. The narrow band gap exhibited by InSb allows for precise tuning of these nanowires,…
Bandstructure effects in the electronic transport of strongly quantized silicon nanowire field-effect-transistors (FET) in various transport orientations are examined. A 10-band sp3d5s* semi-empirical atomistic tight-binding model coupled…
Numerical computations of transport coefficients at low temperatures are presented for shapes typically encountered in nuclear fission. The influence of quantum effects of the nucleonic degrees of freedom is examined, with pair correlations…
A first-principle model is proposed to study the electrostatic properties of a double-gated silicon slab of nano scale in the framework of density functional theory. The applied gate voltage is approximated as a variation of the…
We present a detailed theoretical investigation of the effect of Coulomb interactions on electron transport through quantum dots and double barrier structures connected to a voltage source via an arbitrary linear impedance. Combining real…
We bring together the semiclassical approximation, matrix integrals and the theory of symmetric polynomials in order to solve a long standing problem in the field of quantum chaos: to compute transport moments when tunnel barriers are…
We report on a general theory for analyzing quantum transport through devices in the Metal-QD-Metal configuration where QD is a quantum dot or the device scattering region which contains Rashba spin-orbital and electron-electron…
Magneto-transport properties are investigated in a binary alloy ring subjected to an Aharonov-Bohm (AB) flux \phi within a single-band non-interacting tight-binding framework. In the first part, we expose analytically the behavior of…
We address the question of how to model electron transport through closed Aharonov-Bohm interferometers which contain quantum dots. By explicitly studying interferometers with one and two quantum dots, we establish the connection between a…
We have studied the quantum transmission properties of serial stub and loop structures. Throughout we have considered free electron networks and the scattering arises solely due to the geometric nature of the problem. The band formation in…
This paper introduces a novel method to account for quantum disorder effects into the classical drift-diffusion model of semiconductor transport through the localization landscape theory. Quantum confinement and quantum tunneling in the…
Contents: (1) Model of a lateral quantum dot system (2) Thermally-activated conduction: onset of the Coulomb blockade oscillations and Coulomb blockade peaks at low temperature (3) Activationless transport through a blockaded quantum dot:…
Many-body effects on tunneling of electrons in semiconductor nanowhiskers are investigated in a magnetic quantum limit. We consider the system with which bulk and edge states coexist. We show that interaction parameters of edge states are…
Quantum transport in a narrow constriction, and in the presence of a finite-range time-modulated potential, is studied. The potential is taken the form $V(x,t) = V_{0} \theta(x)\theta(a-x)\cos(\omega t)$, with $a$ the range of the potential…
Quantum dots are versatile systems for exploring quantum transport, electron correlations, and many-body phenomena such as the Kondo effect. While equilibrium properties are well understood through methods like the numerical renormalization…
We present a review of some results concerning electronic transport properties of quasicrystals. After a short introduction to the basic concepts of quasiperiodicity, we consider the experimental transport properties of electrical…
Generic quantum interference effects occuring in 1D-quasicrystals are reviewed with emphasis on the joint effect of phason disorder on electronic localization and propagation modes. In close conjunction with properties of real materials,…