Related papers: Ballistic anisotropic magnetoresistance
We investigate the anisotropic magnetoresistance (AMR) of ferromagnetic CoNi microhelices fabricated by electrodeposition and laser printing. We find that the geometry of the three-dimensional winding determines a characteristic angular and…
We have performed a systematic investigation of magnetotransport of a series of as-grown and annealed Ga1-xMnxAs samples with 0.011 <= x <= 0.09. We find that the anisotropic magnetoresistance (AMR) generally decreases with increasing…
We study anisotropic magnetoresistance (AMR) in a spin-polarized two-dimensional electron gas with Rashba spin-orbit coupling and nonmagnetic disorder collision. We show that AMR exists, arising from the combined effect of in-plane…
We report the magnetic and magnetotransport properties and electronic band structure of the kagome Dirac semimetal HoMn$_6$Ge$_6$. Temperature-dependent electrical resistivity demonstrates various magnetic-transition-driven anomalies.…
We study the effect of the domain wall on electronic transport properties in wire of ferromagnetic 3$d$ transition metals based on the linear response theory. We considered the exchange interaction between the conduction electron and the…
Tunneling anisotropic magnetoresistance (TAMR) effect, discovered recently in (Ga,Mn)As ferromagnetic semiconductors, arises from spin-orbit coupling and reflects the dependence of the tunneling density of states in a ferromagnetic layer on…
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…
Nonreciprocal transport in uniform systems has attracted great research interest recently and the existing theories mainly focus on the diffusive regime. In this study, we uncover a novel scenario for nonreciprocal charge transport in the…
We investigate charge transport in two-dimensional ferromagnet/feromagnet junction on a topological insulator. The conductance across the interface depends sensitively on the directions of the magnetizations of the two ferromagnets, showing…
We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is…
The extremely large transverse magnetoreistance (the magnetoresistant ratio $\sim 1.3\times10^5\%$ in 2 K and 9 T field, and $4.3\times 10^6\%$ in 0.4 K and 32 T field, without saturation), and the metal-semiconductor crossover induced by…
We propose a kinetic theory of transport in metals embedded with ferromagnetic nanoclusters, describing the dependence of the form of magnetoresistance on anisotropy characteristics of the ensemble of clusters and the influence of the…
The change of a material's electrical resistance (R) in response to an external magnetic field (B) provides subtle information for the characterization of its electronic properties and has found applications in sensor and storage related…
We report investigations on the magnetotransport in LaSb, which exhibits extremely large magnetoresistance (XMR). Foremost, we demonstrate that the resistivity plateau can be explained without invoking topological protection. We then…
Recent experiments on the antiferromagnetic intercalated transition metal dichalcogenide $\mathrm{Fe_{1/3}NbS_2}$ have demonstrated reversible resistivity switching by application of orthogonal current pulses below its magnetic ordering…
We fabricate ferromagnetic nanowires with constrictions whose cross section can be reduced gradually from 100 nm to the atomic scale and eventually to the tunneling regime by means of electromigration. These devices are mechanically stable…
We present a comprehensive first-principles study of the magnetoresistance in ZrSi$X$ ($X=$ S, Se, Te) topological nodal-line semimetals. Our study demonstrates that all primary features of the experimentally measured magnetoresistance in…
We observe large amplitude changes in the resistance of ferromagnetic (F) wires at the onset of superconductivity of adjacent superconductors (S). New sharp peaks of large amplitude are found in the magnetoresistance of the F-wires. We…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
We investigate the effects of strain on antiferromagntic (AFM) single crystal thin films of La$_{1-x}$Sr$_{x}$MnO$_{3}$ (x = 0.6). Nominally unstrained samples have strong magnetoresistance with anisotropic magnetoresistances (AMR) of up to…