Related papers: Quantitative Study of Magnetotransport through a (…
General expressions for the longitudinal and transverse resistivities of single-crystalline cubic and tetragonal ferromagnets are derived from a series expansion of the resistivity tensor with respect to the magnetization orientation. They…
In this work we show the existence of closure domains in Fe$_{1-x}$Ga$_x$ thin films featuring a striped magnetic pattern and study the effect of the magnetic domain arrangement on the magnetotransport properties. By means of X-ray resonant…
We demonstrate that the interplay of in-plane biaxial and uniaxial anisotropy fields in (Ga,Mn)As results in a magnetization reorientation transition and an anisotropic AC susceptibility which is fully consistent with a simple single domain…
We present results of numerical calculations of domain-wall resistance in the ferromagnetic semiconductor (Ga,Mn)As. We employ Landauer-Buttiker formalism and the tight binding method. Taking into account the full valence band structure we…
We investigate, angle dependent, the magnetoresistance (MR) of individual self-assembled ferromagnetic GaAs/(Ga,Mn)As core-shell nanowires at cryogenic temperatures. The shape of the MR traces and the observed strong anisotropies in…
We demonstrate the presence of an important anisotropic magnetoresistance contribution to the domain wall resistance recently measured in thin-film (Ga,Mn)As with in-plane magnetic anisotropy. Analytic results for simple domain wall…
Recent studies demonstrate that an individual magnetic domain wall (DW) can be trapped and reproducibly positioned within multiterminal (Ga,Mn)As microdevices. The electrical resistance obtained from such measurements is found to be…
The longitudinal and transverse resistivities of differently strained (Ga,Mn)As layers are theoretically and experimentally studied as a function of the magnetization orientation. The strain in the series of (Ga,Mn)As layers is gradually…
We have calculated the resistivity of a GaAs\slash AlGaAs heterojunction in the presence of both an in--plane magnetic field and a weak perpendicular component using a semiclassical Boltzmann transport theory. These calculations take into…
This review is focused on extrinsic magnetotransport effects in ferromagnetic oxides. It consists of two parts; the second part is devoted to an overview of experimental data and theoretical models for extrinsic magnetotransport phenomena.…
We present a theoretical analysis of recent experimental measurements of magnetoresistance in (Ga,Mn)As epilayers with perpendicular magnetic anisotropy. The model reproduces the field-antisymmetric anomalies observed in the longitudinal…
Magnetotransport properties of ferromagnetic semiconductor (Ga,Mn)As have been investigated. Measurements at low temperature (50 mK) and high magnetic field (<= 27 T) have been employed in order to determine the hole concentration p =…
We microscopically derive transport equations for the conduction electrons in ferromagnetic materials with an inhomogeneous magnetization profile. Our quantum kinetic approach includes elastic scattering and anisotropic spin-flip scattering…
We probe the magnetotransport properties of individual InAs nanowires in a field effect transistor geometry. In the low magnetic field regime we observe magnetoresistance that is well described by the weak localization (WL) description in…
The magneto-conductance of an InAs nanowire is investigated with respect to the relative orientation between external magnetic field and the nanowire axis. It is found that both the perpendicular and the parallel magnetic fields induce a…
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side of the constriction to either parallel or antiparallel…
Ferromagnetic semiconductors promise the extension of metal-based spintronics into a material system that combines widely tunable electronic, optical, and magnetic properties. Here, we take steps towards realizing that promise by achieving…
The ferromagnetism of a thin GaMnAs layer with a perpendicular easy anisotropy axis is investigated by means of several techniques, that yield a consistent set of data on the magnetic properties and the domain structure of this diluted…
A series of microstructures designed to pin domain-walls (DWs) in (Ga,Mn)As with perpendicular magnetic anisotropy has been employed to determine extrinsic and intrinsic contributions to DW resistance. The former is explained quantitatively…
We studied magnetoresistance (MR) of nanoconstrictions created in (Ga,Mn)As epilayers by O+ ion implantation. Original layers exhibit a negative MR that is plausibly caused by weak localization (WL) effects at the lowest temperatures. In…