Related papers: Electron spin coherence in Si/SiGe quantum wells
Spin accumulation is generated by injecting an unpolarized charge current into a channel of GaAs two-dimensional electron gas subject to an in-plane magnetic field, then measured in a non-local geometry. Unlike previous measurements that…
In a recent Letter Hammar et al. claim the observation of injection of a spin-polarized current in a two-dimensional electron gas (2DEG). This is an important observation, since, despite considerable effort of several groups, all attempts…
Using scanning gate microscopy (SGM), we probe the scattering between a beam of electrons and a two-dimensional electron gas (2DEG) as a function of the beam's injection energy, and distance from the injection point. At low injection…
We present a theoretical study of elastic spin-dependent electron scattering caused by a charged impurity in the vicinity of a two-dimensional electron gas. We find that the symmetry properties of the spin-dependent differential scattering…
We study diffusive electron-electron interaction correction to conductivity by analyzing simultaneously $\rho_{xx}$ and $\rho_{xy}$ for disordered 2D electron systems in Si in tilted magnetic field. Tilting the field is shown to be a…
Recent experiments in the two dimensional electron systems in silicon MOSFETs have shown that the in-plane magnetic field $H_{sat}$ required to saturate the conductivity to its high-field value and the magnetic field $H_s$ needed to…
We study the spin dynamics in a high-mobility two dimensional electron gas (2DEG) with generic spin-orbit interactions (SOIs). We derive a set of spin dynamic equations which capture the purely exponential to the damped oscillatory spin…
We study the electrical transport properties of a two-dimensional electron gas with the Rashba spin-orbit interaction in presence of a constant perpendicular magnetic field $(B_0 \hat z)$ which is weakly modulated by ${\bf B_1} = B_1 \cos…
In transition metal dichalcogenide semiconductor monolayers the spin dynamics of electrons is controlled by the original spin-valley locking effect resulting from the interplay between spin-orbit interaction and inversion asymmetry. As a…
The theory of spin relaxation of conduction electrons is developed for zinc-blende-type quantum wells grown on (110)-oriented substrate. It is shown that, in asymmetric structures, the relaxation of electron spin initially oriented along…
This study explores the relationship between spin diffusion, spin lifetime, electron density and lateral spatial confinement in two-dimensional electron gases hosted in GaAs quantum wells. Using time-resolved magneto-optical Kerr effect…
In a high mobility two-dimensional electron gas (2DEG) in a GaAs/AlGaAs quantum well we observe a strong magnetoresistance. In lowering the electron density the magnetoresistance gets more pronounced and reaches values of more than 300%. We…
Electron spin resonance (ESR) is usually interpreted as a single-particle phenomenon protected from the effect of many-body correlations. We show that this is not the case in a two-dimensional Fermi liquid (FL) with spin-orbit coupling…
We review recent studies on spin decoherence of electrons and holes in quasi-two-dimensional quantum dots, as well as electron-spin relaxation in nanowire quantum dots. The spins of confined electrons and holes are considered major…
Microwave irradiation of a two-dimensional electron gas (2DEG) produces a non-equilibrium distribution of electrons, and leads to oscillations in the dissipative part of the conductivity. We show that the same non-equilibrium electron…
In this contribution, we investigated the spin coherence of high-mobility dense two-dimensional electron gases confined in multilayer systems. The dynamics of optically-induced spin polarization was experimentally studied employing the…
A spin-1/2 Anderson impurity in a semiconductor quantum well with Rashba and Dresselhaus spin-orbit couplings is studied by using a variational wave function method. The local magnetic moment is found to be quenched at low temperatures. The…
The remarkable properties of silicon have made it the central material for the fabrication of current microelectronic devices. Silicon's fundamental properties also make it an attractive option for the development of devices for spintronics…
Electron spin resonance scanning tunneling microscopy (ESR-STM) has become a powerful tool for probing spin dynamics and coherence of individual atoms and molecules on surfaces. In this work, we perform Rabi oscillation and Hahn echo pulse…
Electron spin oriented along an external magnetic field is subject to longitudinal spin relaxation with characteristic time $T_1$. The corresponding decay is nonoscillating, so one cannot readily ascribe $T_1$ to a certain $g$ factor. This…