Related papers: Magnetic tunnel junctions with impurities
We report an extensive first-principles investigation of impurity-induced device-to-device variability of spin-polarized quantum tunneling through Fe/MgO/Fe magnetic tunnel junctions (MTJ). In particular, we calculated the tunnel…
The spin-polarized transport is investigated in a new type of magnetic tunnel junction which consists of two ferromagnetic electrodes separated by a magnetic barrier and a nonmagnetic metallic spacer. Based on the transfer matrix method and…
We make a theoretical study of the quantum oscillations of the tunneling magnetoresistance (TMR) as a function of the spacer layer thickness. Such oscillations were recently observed in tunneling junctions with a nonmagnetic metallic spacer…
We study the formation of inhomogeneous magnetization texture in the vicinity of a tunnel junction between two ferromagnetic wires nominally in the antiparallel configuration and its influence on the magnetoresistance of such a device. The…
We theoretically investigate magnetoresistance (MR) effects in connection with spin filtering in quantum-coherent transport through tunnel junctions based on non-magnetic/semimagnetic heterostructures. We find that spin filtering in…
We theoretically study the spin-dependent transport in a ferromagnet/super- conductor/ferromagnet double tunnel junction. The tunneling current in the antiferromagnetic alignment of the magnetizations gives rise to a spin imbalance in the…
We consider a new type of magnetic tunnel junction, which consists of two ferromagnetic tunnel barriers acting as spin filters (SFs), separated by a nonmagnetic metal (NM) layer. Using the transfer matrix method and the free-electron…
Magnetic tunnel junctions (MTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field…
A systematic, quantitative study of the effect of interface roughness and disorder on the magnetoresistance of FeCo$|$vacuum$|$FeCo magnetic tunnel junctions is presented based upon parameter-free electronic structure calculations. Surface…
We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety…
A tunnel magnetic junction is considered with magnetic hard and magnetic soft layers of cubic symmetry. The magnetic switching is analyzed of the layers by a magnetic field perpendicular to the initial magnetizations. In such a situation,…
The tunnel magnetoresistance (TMR) effect is one of the representative phenomena in spintronics. Ferromagnets, which have a net spin polarization, have been utilized for the TMR effect. Recently, by contrast, the TMR effect with…
Direct tunneling in ferromagnetic junctions is compared with impurity-assisted, surface state assisted, and inelastic contributions to a tunneling magnetoresistance (TMR). Theoretically calculated direct tunneling in iron group systems…
Changes: figures added in postscript form, Eq. (7) and various typos corrected. We examine the effect of an impurity on the nearby tunneling conductance in an anisotropically-gapped superconductor. The variation of the conductance has…
We show that elastic currents that take into account variations of the tunnel transmitivity with voltage and a large ratio of majority to minority spin densities of states of the $s$ band, can account for the low voltage current anomalies…
We calculate the conductances and the tunneling magnetoresistance (TMR) of double magnetic tunnel junctions, taking as a model example junctions composed of Fe/ZnSe/Fe/ZnSe/Fe (001). The calculations are done as a function of the gate…
The dependence of tunneling conductance and tunneling magnetoresistance (TMR) on barrier thickness in magnetic tunnel junctions is theoretically investigated. The complex band structure of the insulator is taken into account, and an…
The electric conductance of a strip of undoped graphene increases in the presence of a disorder potential, which is smooth on atomic scales. The phenomenon is attributed to impurity-assisted resonant tunneling of massless Dirac fermions.…
Conventional superconductors disordered by magnetic impurities demonstrate physical properties drastically different from their pristine counterparts. In our previous work [Phys. Rev. B 92, 245430 (2015)] we explored spectral and…
Recent work has found that the interplay between spin accumulation and Coulomb blockade in nanoparticle arrays results in peaky I-V and tunneling magnetoresistance (TMR) curves and in huge values of the TMR. We analyze how these effects are…