Related papers: Domain wall displacement triggered by an AC curren…
We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure. The stripes have been…
We theoretically study the current-driven domain wall motion in the presence of both the spin Hall effect and an extrinsic pinning potential. The spin Hall effect mainly affects the damping ratio of the domain wall precession in the pinning…
A self-contained theory of the domain wall dynamics in ferromagnets under finite electric current is presented. The current is shown to have two effects; one is momentum transfer, which is proportional to the charge current and wall…
We have studied the current-induced displacement of a domain wall (DW) in the permalloy (Py) layer of a Co/Cu/Py spin valve structure at zero and very small applied field. The displacement is in opposite direction for opposite dc currents,…
The coupling between a current and a Bloch wall is examined in the half-metal limit of the double exchange model. The conduction electrons transfer angular momentum to the Bloch wall with 100% efficiency in the absence of pinning. The wall…
Transmission probability of a domain wall through a magnetic nanowire is investigated as a function of the external magnetic field. Very intriguing phenomenon is found that the transmission probability shows a significant drop after…
Conventionally, dc fields are used for switching dipole orientations in ferroelectrics. Such fields tilt the potential surface experienced by domain walls and thereby lower activation energies for their movement: escape from tilted…
Domain wall propagation in cylindrical nanowires with modulations of diameter is a key phenomenon to design physics-oriented devices, or a disruptive three-dimensional magnetic memory. This chapter presents a combination of analytical…
Magnetic domain walls can be moved by spin-polarized currents due to spin-transfer torques. This opens the possibility to use them in spintronic memory devices as, e.g., in racetrack storage. Naturally, in miniaturized devices domain walls…
The effective spin pressure induced by an electric current on a domain wall in a ferromagnet is determined using a simple classical model, which allows us to extend previous theories to arbitrary domain wall widths. In particular, the role…
Most of the existing researches on the dynamics of a domain wall (DW) have focused on the effect of DC biases, where the induced velocity is determined by the bias strength. Here we show that AC biases such as a field or a current are also…
We demonstrate numerically the ability to displace a magnetic domain wall by a remote spin current injection. We consider a long and narrow magnetic nanostripe with a single domain wall (DW). The spin-polarized current is injected…
We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic…
The future developments of three-dimensional magnetic nanotechnology require the control of domain wall dynamics by means of current pulses. While this has been extensively studied in planar magnetic strips (planar nanowires), few reports…
We consider the spin torque induced by a current flowing ballistically through a magnetic domain wall. In addition to a global pressure in the direction of the electronic flow, the torque has an internal structure of comparable magnitude…
We present a model for current-driven motion of a magnetic domain-wall line, in which the dynamics of the domain wall is equivalent to that of an overdamped vortex line in an anisotropic pinning potential. This potential has both extrinsic…
Current-driven magnetic domain wall motion is demonstrated in the quaternary ferromagnetic semiconductor (Ga,Mn)(As,P) at temperatures well below the ferromagnetic transition temperature, with critical currents of the order 10^5Acm^-2. This…
We calculate the interaction between two magnetic domain walls during their current-induced motion. This interaction produces a separation-dependent resistance and also a differential velocity, causing domains in motion to experience an…
We develop the theory of magnetic domain wall motion in coupled double-layer systems where electrons can hop between the layers giving rise to an antiferromagnetic coupling. We demonstrate that the force from the interlayer coupling drives…
Perpendicularly magnetized materials have attracted tremendous interest due to their high anisotropy, which results in extremely narrow, nano-sized domain walls. As a result, the recently studied current-induced domain wall motion (CIDWM)…