Related papers: Spin-dependent resonant tunneling through quantum-…
Quantum-well (QW) devices have been extensively investigated in semiconductor structures. More recently, spin-polarized QWs were integrated into magnetic tunnel junctions (MTJs). In this work, we demonstrate the spin-based control of the…
Double barrier heterostructures are model systems for the study of electron tunneling and discrete energy levels in a quantum well (QW). Until now resonant tunneling phenomena in metallicQW have been observed for limited thicknesses (1-2…
We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety…
Resonant tunneling through semimetallic ErAs quantum wells embedded in GaAs structures with AlAs barriers was recently found to exhibit an intriguing behavior in magnetic fields which is explained in terms of tunneling selection rules and…
We report the existence of confined massless fermion states in a graphene quantum well (QW) by means of analytical and numerical calculations. These states show an unusual quasi-linear dependence on the momentum parallel to the QW: their…
Fully-relativistic first-principles calculations of the Fe(001) surface demonstrate that resonant surface (interface) states may produce sizeable tunneling anisotropic magnetoresistance in magnetic tunnel junctions with a single magnetic…
Quantum-well resonance is achieved through partial confinement in magnetic tunnel junctions (MTJs), which provides an additional operable degree of freedom to regulate quantum-well levels. Using Al/Fe/MgO/Fe/Al and Ag/Al/Fe/MgO/Fe/Al/Ag…
Using Density functional theory and non-equilibrium Green's function formalism, spin dependent electron transport in Fe/Mo$_x$Cr$_{1-x}$S$_2$/Fe magnetic tunnel junction is studied. Spin transport for different thicknesses (1, 3, 5, and 7…
The bias dependence of the tunnel magnetoresistance (TMR) of Fe/MgO/Fe tunnel junctions is investigated theoretically with a fully self-consistent scheme that combines the non-equilibrium Green's functions method with density functional…
In a previous work (PRL 87, 140405), we have shown that a spinor condensate confined in a periodic or double-well potential exhibits ferromagnetic behavior due to the magnetic dipole-dipole interactions between different wells, and in the…
We investigate the spin-dependent tunneling properties in a three-terminal III-V-based ferromagnetic-semiconductor heterostructure with a 2.5-nm-thick GaMnAs quantum well (QW) and double barriers. We successfully control the quantum levels…
Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures…
Using the transfer matrix method and the effective-mass approximation, the effect of resonant states on spin transport is studied in ZnSe/ZnMnSe/ZnSe/ZnMnSe/ZnSe structures under the influence of both electric and magnetic fields. The…
The dynamic interplay of transport, electrostatic, and magnetic effects in the resonant tunneling through ferromagnetic quantum wells is theoretically investigated. It is shown that the carrier-mediated magnetic order in the ferromagnetic…
We have developed a quantitative theory of resonant tunneling of magnetic flux between discrete macroscopically distinct quantum states in SQUID systems. The theory is based on the standard density-matrix approach. Its new elements include…
The tunnel magnetoresistance (TMR) of F/O/F magnetic junctions, (F's are ferromagnetic layers and O is an oxide spacer) in the presence of magnetic impurities within the barrier, is investigated. We assume that magnetic couplings exist both…
Transport through molecular magnets is studied in the regime of strong coupling to the leads. We consider a resonant-tunneling model where the electron spin in a quantum dot or molecule is coupled to an additional local, anisotropic spin…
Understanding quantum tunneling in many-body systems is crucial for advancing quantum technologies and nanoscale device design. Despite extensive studies of quantum tunneling, the role of interactions in determining directional transport…
The conductance and tunnel magneto-resistance (TMR) of the double barrier magnetic tunnel junction with spin-valve sandwich (F/P/F) inserted between two insulating barrier, are theoretically investigated. It is shown, that resonant…
Exploiting the spin resonance of two-dimensional (2D) electrons in SiGe/Si quantum wells we determine the carrier-density-dependence of the magnetic susceptibility. Assuming weak interaction we evaluate the density of states at the Fermi…