Related papers: High-Field Conduction in Barium Titanate
It is challenging to search for high Tc superconductivity (SC) in transition metal elements wherein d electrons are usually not favored by conventional BCS theory. Here we report discovery of surprising SC up to 310 GPa with Tc above 20 K…
Carrier conduction in wide bandgap semiconductors (WBS) often exhibits velocity saturation at the high-electric field regime. How such effect influences the transition between contact-limited and space-charge-limited current in a…
The emergence of halide perovskites in photovoltaics has diversified the research on this material family and extended their application towards several fields in the optoelectronics, such as photo- and ionizing-radiation-detectors. One of…
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of…
A study of temperature dependences of the upper critical field B_{c2}(T) and surface impedance Z(T)=R(T)+iX(T) in Ba_{1-x}K_xBiO_3 single crystals that have transition temperatures in the range 6 < T_c < 32 K (roughly 0.6>x>0.4) reveals a…
In this paper, we report enhanced breakdown characteristics of Pt/BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes compared to Pt/Al0.58Ga0.42N Schottky diodes. BaTiO3, an extreme dielectric constant material, has been used, in this…
Experiments on potential differences in the low-temperature vortex solid phase of monocrystalline platelets of superconducting Bi(2)Sr(2)CaCu(2)O(8) (BSCCO) subjected to currents driven either through an "ab" surface or from one such…
Dislocations in perovskite oxides have drawn increasing research interest due to their potential of tuning functional properties of electroceramics. Open questions remain regarding the behavior of dislocations concerning their stability…
Superconductivity, at 2-3 K, was observed in a novel phase of the ternary Li-Rh-B system. The structural phase exhibits a large noncentrosymmetric cubic unit cell with the a-parameter being within 1.208 \leq a \leq 1.215 nm. This phase is…
Charge transport properties in organic semiconductors are determined by two kinds of microscopic disorders, namely energetic disorder related to the distribution of localized states and the spatial disorder related to the morphological…
Artificial superlattices of (BiFeO3)m(SrTiO3)m (m= 1 to 10 unit cells) consisting of multiferroic BiFeO3 and insulating SrTiO3 layers were fabricated on (100)-oriented SrTiO3 substrates by pulsed laser ablation. The remnant polarization and…
We have conducted a careful study of current-voltage (I-V) characteristics in fully integrated commercial PbZr0.4Ti0.6O3 thin film capacitors with Pt bottom and Ir/IrO2 top electrodes. Highly reproducible steady state I-V were obtained at…
Space-charge-limited current (SCLC) measurements are used to estimate charge carrier mobilities and electronic trap densities of semiconductors by analysing the current density-voltage (JV) relationship for unipolar devices predicted by the…
Strontium titanate has resurfaced as a material prompting vigorous debate about the origin of its superconductivity in the extremely low carrier concentration regime. Here, we used simultaneous AC susceptibility and transport methods to…
We present a study of the superconducting properties of the candidate topological superconductor Ti_(3)Sb. Electrical transport measurements show zero resistance with a T_(c,onset) of ~ 5.9 K with a transition width {\Delta}T_c~ 0.6 K. The…
Based on the assumption that the contact barrier height determines the current flow in organic semiconductor-based electronic devices, charge injection at metal-organic (MO) interfaces has been extensively investigated, while space-charge…
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics.…
In this study, a low energy beam transport (LEBT) channel for the proton linac section of the Turkic Accelerator Complex (TAC) has been designed by using TRACE 2D and TRAVEL codes. The LEBT channel is located between an ion source and a…
When two electrode open-circuit potentials form a full-cell OCV (open-circuit voltage) model, cell-level SOH (state of health) parameters related to LLI (loss of lithium inventory) and LAM (loss of active materials) naturally appear. Such…
A theory of relativistic space-charge-limited current (SCLC) is formulated to determine the SCLC scaling, $J\propto V^{\alpha}/L^{\beta}$, for a finite bandgap Dirac material of length $L$ biased under a voltage $V$. In a one-dimensional…