Related papers: Observing sub-microsecond telegraph noise with the…
Scientific CMOS (sCMOS) image sensors are a modern alternative to typical CCD detectors and are rapidly gaining popularity in observational astronomy due to their large sizes, low read-out noise, high frame rates, and cheap manufacturing.…
Nowadays, random telegraph signals play an important role in integrated circuit performance variability, leading for instance to failures in memory circuits. This problem is related to the successive captures and emissions of electrons at…
The dependence of random telegraph noise (RTN) amplitude on the gate overdrive in a junctionless field-effect transistor (FinFET) with rectangular and trapezoidal channel (fin) cross sections manufactured using silicon-on-insulator…
We review the latest progress in understanding the fundamental noise properties of a coherent single electron emitter known as the mesoscopic capacitor. The system consists of a sub-micron cavity connected to a two-dimensional electron gas…
Current noise in electronic devices usually arises from uncorrelated charging events, with individual transitions resolved only at low temperatures. However, in 1-D nanotube-based transistors, we have observed random telegraph signal (RTS)…
We report on the influence of low gamma irradiation (10^4 Gy) on the noise properties of individual carbon nanotube (CNT) field-effect transistors (FETs) with different gate configurations and two different dielectric layers, SiO2 and…
We study decoherence due to random telegraph and 1/f noise in Josephson qubits. We illustrate differences between gaussian and non gaussian effects at different working points and for different protocols. Features of the intrinsically…
We present the fabrication and measurement of a radio frequency single electron transistor (rf-SET), that displays a very high charge sensitivity of 1.9 microlectrons/sqrt(Hz) at 4.2 K. At 40 mK, the charge sensitivity is 0.9 and 1.0…
We have investigated radio-frequency single-electron transistor (RF-SET) operation of single-walled carbon nanotube quantum dots in the strong tunneling regime. At 4.2 K and carrier frequency 754.2 MHz, we reach a charge sensitivity of…
Zero-frequency spectral densities of current noise, charge noise, and their cross-correlation are calculated for the SET transistor in the co-tunneling regime. The current noise has a form expected for the uncorrelated co-tunneling events.…
We report on the realization of a high sensitivity RF noise measurement scheme to study small current fluctuations of mesoscopic systems at milliKelvin temperatures. The setup relies on the combination of an interferometric ampli- fication…
In this work, we investigate the dynamics of a single electron surface trap, embedded in a self-assembly metallic double-dot system. The charging and discharging of the trap by a single electron is manifested as a random telegraph signal of…
An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external…
Electron transport in nano-scale structures is strongly influenced by the Coulomb interaction which gives rise to correlations in the stream of charges and leaves clear fingerprints in the fluctuations of the electrical current. A complete…
In this letter we present the results of systematic experimental investigations of the effect of different chemical environments on the low frequency resistance fluctuations of single layer graphene field effect transistors (SLG-FET). The…
We present a general and exact formalism for finding the evolution of a quantum system subject to external telegraph noise. The various qubit decoherence rates are determined by the eigenvalues of a transfer matrix. The formalism can be…
We calculate the spectral density of voltage fluctuations in a Single Electron Transistor (SET), biased to operate in a transport mode where tunneling events are correlated due to Coulomb interaction. The whole spectrum from low frequency…
The interaction between the telegraph noise and background voltage fluctuations in the current induced dissipative state of high-Tc BiSrCaCuO thin films has been investigated. Experimental time records of the voltage drop across current…
We measure telegraph noise of current fluctuations in an electrostatically defined quantum dot in bilayer graphene by real-time detection of single electron tunneling with a capacitively coupled neighboring quantum dot. Suppression of the…
Generating streams of true random numbers is a critical component of many embedded systems. The design of fully integrated, area and power efficient True Random Number Generators is a challenge. We propose a fully integrated, lightweight…