Related papers: Bias voltage controlled magnetization switch in fe…
We present experimental and theoretical studies of the magnetoresistance oscillations induced by resonance transitions of electrons between tunnel-coupled states in double quantum wells. The suppression of these oscillations with increasing…
We demonstrate an electric-field control of tunneling magnetoresistance (TMR) effect in a semiconductor quantum-dot (QD) spin-valve device. By using ferromagnetic Ni nano-gap electrodes, we observe the Coulomb blockade oscillations at a…
Selective and large polarization of current injected into semiconductor (SC) is predicted in Ferromagnet (FM)/Quantum Dot (QD)/SC system by varying the gate voltage above the Kondo temperature. In addition, spin-dependent Kondo effect is…
We perform a detailed study of the effect of finite bias and magnetic field on the tunneling-induced decay of the state of a quantum dot by applying a recently discovered general duality [PRB 93, 81411 (2016)]. This duality provides deep…
We develop a technique for predicting the Curie temperature of magnetic materials using density functional theory calculations suitable to include in high-throughput frameworks. We apply four different models, including physically relevant…
We demonstrate a voltage-controlled exchange bias effect in CoFeB/MgO/CoFeB magnetic tunnel junctions that is related to the interfacial Fe(Co)Ox formed between the CoFeB electrodes and the MgO barrier. The unique combination of interfacial…
The magnetic properties of dilute magnetic semiconductors (DMS) are calculated from first-principles by mapping the ab initio results on a classical Heisenberg model. It is found that the range of the exchange interaction in (Ga, Mn)N is…
We show that effective electrical control of the magnetic properties in the ferromagnetic semiconductor (Ga,Mn)As is possible using the strain induced by a piezoelectric actuator even in the limit of high doping levels and high Curie…
Spin caloritronics studies the interplay between charge-, heat- and spin-currents, which are initiated by temperature gradients in magnetic nanostructures. A plethora of new phenomena has been discovered that promises, e.g., to make wasted…
The tunneling conductance is calculated as a function of the gate voltage in wide temperature range for the single quantum dot systems with Coulomb interaction. We assume that two orbitals are active for the tunneling process. We show that…
Near the Curie temperature the anisotropy field of magnetically uniaxial L10 FePt is expected to follow the scaling law $(1-T/Tc)^\beta$ where $T$ is the temperature and $T_c$ the Curie temperature. In the literature $\beta$ values between…
Using Fe/GaAs Schottky tunnel barriers as electrical spin detectors, we show that the magnitude and sign of their spin-detection sensitivities can be widely tuned with the voltage bias applied across the Fe/GaAs interface. Experiments and…
We calculate the magnetic-field and temperature dependence of all quantum corrections to the ensemble-averaged conductance of a network of quantum dots. We consider the limit that the dimensionless conductance of the network is large, so…
A numerical renormalization-group study of the conductance through a quantum wire side-coupled to a quantum dot is reported. The temperature and the dot-energy dependence of the conductance are examined in the light of a recently derived…
We report a theoretical study of the macroscopic quantum tunneling (MQT) in small Josephson junctions containing randomly distributed two-level systems. We focus on the magnetic field dependent crossover temperature $T_{cr}$ between the…
Different mechanisms of spin-dependent tunneling are analyzed with respect to their role in tunnel magnetoresistance (TMR). Microscopic calculation within a realistic model shows that direct tunneling in iron group systems leads to about a…
We propose a refrigeration scheme in a mesoscopic superconductor-quantum dot hybrid device. The setup can significantly cool down a normal metal coupled to the device by applying a bias voltage across the system. We demonstrate that the…
Carrier induced ferromagnetism in diluted III-V semi-conductor is analyzed within a two step approach. First, within a single site CPA formalism, we calculate the element resolved averaged Green's function of the itinerant carrier. Then…
(Ga,Mn)As and related diluted magnetic semiconductors play a major role in spintronics research because of their potential to combine ferromagnetism and semiconducting properties in one physical system. Ferromagnetism requires ~1-10% of…
We report on the first measurement of the Seebeck coefficient in a tunnel-contacted and gate-tunable individual single-quantum dot junction in the Kondo regime, fabricated using the electromigration technique. This fundamental…