Related papers: Anomalous Hall effect in insulating Ga1-xMnxAs
We thoroughly investigate the effect of nonmagnetic Sn doping on the electronic and magnetic properties of antiferromagnetic topological insulator MnBi$_2$Te$_4$. We observe that Sn doping reduces the out-of-plane antiferromagnetic (AFM)…
Recently, this long-sought quantum anomalous Hall effect was realized in the magnetic topological insulator. However, the requirement of an extremely low temperature (approximately 30 mK) hinders realistic applications. Based on…
We present a theory of the Anomalous Hall Effect (AHE) in ferromagnetic (Ga,Mn)As in the regime when conduction is due to phonon-assisted hopping of holes between localized states in the impurity band. We show that the microscopic origin of…
Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in a variety of ferromagnetic metals including pure metals, oxides, and chalcogenides, are studied to obtain unified understandings of their origins. We show a universal scaling…
Magnetism breaks the time reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to quantum anomalous Hall effect. The most common approach of inducing ferromagnetic state is by doping magnetic…
Ferrimagnetic Mn$_4$N is a promising material for heat flux sensors based on the anomalous Nernst effect (ANE) because of its sizable uniaxial magnetic anisotropy ($K_{\rm u}$) and low saturation magnetization ($M_{\rm s}$). We…
The Hall resistivity (Rho_xy), resistivity (Rho_xx), and magnetization of three metallic ferromagnets are investigated as a function of magnetic field and temperature. The three ferromagnets, EuFe4Sb12 (Tc = 84 K), Yb14MnSb11 (Tc = 53 K),…
Magnetically doped topological insulators have been extensively studied over the past decade as a material platform to exhibit quantum anomalous Hall effect. Most material realizations are magnetically doped and despite material advances…
We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn$_3$Ge. The AHE originating from the non-vanishing Berry curvature in Mn$_3$Ge can be continuously tuned by application of…
We have investigated the effect of Ge-substitution to the magnetic ordering in the B20 itinerant chiral magnet MnSi prepared by melting and annealing under ambient pressure. From metallurgical survey, the solubility limit of Ge was found to…
Molecular beam epitaxy has been employed to obtain Ga1-xMnxN films with x up to 10% and Curie temperatures T_C up to 13 K. The magnitudes of T_C and their dependence on x, T_C(x) ~ x^m, where m = 2.2 +/- 0.2 are quantitatively described by…
We report a nearly ideal quantum anomalous Hall effect in a three-dimensional topological insulator thin film with ferromagnetic doping. Near zero applied magnetic field we measure exact quantization in Hall resistance to within a part per…
In the present work, we perform a systematic investigation on p-type codoping in (Ga,Mn)As. Through gradually increasing Zn doping concentration, the hole concentration increases, which should theoretically lead to an increase of the Curie…
The quantum anomalous Hall effect is a fundamental transport response of a topologically non-trivial system in zero magnetic field. Its physical origin relies on the intrinsically inverted electronic band structure and ferromagnetism, and…
Investigating the thermoelectric properties of ferromagnets is important for the development of future microelectronic devices for efficient energy conversion purposes. Ferromagnetic Mn$_5$Ge$_3$C$_x$ thin films with a Curie temperature up…
We report on low-temperature electron transport properties of MnSb2Te4, a candidate of ferrimagnetic Weyl semimetal. Long -range magnetic order is manifested as a nearly square-shaped hysteresis loop in the anomalous Hall resistance, as…
We report magnetoresistance measurements over an extensive temperature range (0.1 K $\leq T \leq$ 100 K) in a disordered ferromagnetic semiconductor (\gma). The study focuses on a series of metallic \gma~ epilayers that lie in the vicinity…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…
We have investigated the transport and magnetization characteristics of Ga1-xMnxAs intentionally compensated with shallow Te donors. Using ion implantation followed by pulsed-laser melting, we vary the Te compensation and drive the system…
The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of…