Related papers: Two-photon spin injection in semiconductors
Partially gold coated 90 degree glass wedges and a semi - infinite slit in a thin film of gold ending in a conducting nano-junction serve as samples to investigate the transfer of photon spin to electron orbital angular momentum. These…
Measurements and modeling of electron spin transport and dynamics are used to characterize hyperfine interactions in Fe/GaAs devices with $n$-GaAs channels. Ga and As nuclei are polarized by electrically injected electron spins, and the…
We simulate the electron transport in vertical bi-layer nanowire which can be fabricated in molecular beam epitaxy process with lateral confinement potential formed by means of cleaved overgrowth or surface oxidization methods giving…
Spin injection from a half-metallic electrode in the presence of thermal spin disorder is analyzed using a combination of random matrix theory, spin-diffusion theory, and explicit simulations for the tight-binding s-d model. It is shown…
We optically generate electron spins in semiconductors and apply an external magnetic field perpendicularly to them. Time-resolved photoluminescence measurements, pumped with a circularly polarized light, are performed to study the spin…
A theory of spin polarized tunneling spectroscopy based on a scattering theory is given for tunneling junctions between ferromagnets and d-wave superconductors. The spin filtering effect of an exchange field in the insulator is also…
Absorption of circularly polarized light in semiconductors is known to result in optical orientation of electron and hole spins. It has been shown here that in semiconductor quantum well structures spin orientation of carriers can be…
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout…
Semiconductor spin lasers are distinguished from their conventional counterparts by the presence of spin-polarized carriers. The transfer of angular momentum of the spin-polarized carriers to photons provides important opportunities for the…
We have studied polariton spin dynamics in a GaAs/AlGaAs microcavity by means of polarization- and time-resolved photoluminescence spectroscopy as a function of excitation density and normal mode splitting. The experiments reveal a novel…
Access to the electron spin is at the heart of many protocols for integrated and distributed quantum-information processing [1-4]. For instance, interfacing the spin-state of an electron and a photon can be utilized to perform quantum gates…
It is well known that the association of parahydrogen (pH2) with an unsaturated molecule or a transient metalorganic complex can enhance the intensity of NMR signals; the effect is known as parahydrogen-induced polarization (PHIP). During…
We report nearly complete preservation of "spin memory" between optical absorption and photoluminescence (PL) in nanometer slabs of GaSe pumped with 0.2 eV excess energy. At cryogenic temperatures, the initial degree of circular…
Deep cooling of electron and nuclear spins is equivalent to achieving polarization degrees close to 100% and is a key requirement in solid state quantum information technologies. While polarization of individual nuclear spins in diamond and…
The optical spin orientation effect in a GaAs/(Ga,Al)As quantum well containing a high-mobility 2D electron gas was found to be due to spin-polarized minority carriers, the holes. The observed oscillations of both the intensity and…
We study the spin dependent tunneling of electrons through a zinc-blende semiconductor with the indirect X (or D) minimum serving as the tunneling barrier. The basic difference between tunneling through the G vs. the X barrier is the…
The spin polarizabilities of the nucleon describe how the spin of the nucleon responds to an incident polarized photon. The most model-independent way to measure the nucleon spin polarizabilities is through polarized Compton scattering.…
The spin polarization (P) of high-density InSb two-dimensional electron systems (2DESs) has been measured using both parallel and tilted magnetic fields. P is found to exhibit a superlinear increase with the total field B. This P-B…
We have made quantitative measurements of the spin polarization of two-dimensional (2D) GaAs (100) electrons and GaAs (311)A holes, as a function of an in-plane magnetic field. The functional form of the in-plane magnetoresistance is shown…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…