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Topological insulators exhibit gapless edge or surface states that are topologically protected by time-reversal symmetry. However, several promising candidates for topologically insulating materials (such as Bi$_2$Se$_3$ and HgTe) contain…
It is known that in two-dimensional relativistic Dirac systems placed in orthogonal uniform magnetic and electric fields, the Landau levels collapse as the applied in-plane electric field reaches a critical value $\pm E_c$. We study this…
Spectral diffusion (SD) represents a substantial obstacle towards implementation of solid-state quantum emitters as a source of indistinguishable photons. By performing high-resolution emission spectroscopy for individual colloidal quantum…
Despite extensive research on the skutterudites for the last decade, their electric crystalline field ground state is still a matter of controversy. We show that Electron Spin Resonance (ESR) measurements can determine the full set of…
In this paper we present an overview on recent progress in studies of QCD at finite temperature and densities within the functional renormalization group (fRG) approach. The fRG is a nonperturbative continuum field approach, in which…
This paper proposes a novel approach for creating an inverse electron distribution function (EDF). Based on the obtained criteria for the formation of an inverse EDF in a non-uniform plasma, studies are conducted in low- and medium-pressure…
Doping to induce suitable impurity levels is an effective strategy to achieve highly efficient photocatalytic overall water splitting (POWS). However, to predict the position of impurity levels, it is not enough to only depend on the…
Illumination has been long known to affect semiconductor defect properties during either growth or operating process. Current theories of studying the illumination effects on defects usually have the assumption of unaffected formation…
We present results of detailed study on the electron dispersions and Fermi surface of lead telluride doped with $2\%$ of thallium, which is resonant impurity in PbTe. Using the KKR--CPA method, Bloch spectral functions (BSFs), which replace…
Incompressible even denominator fractional quantum Hall states at fillings $\nu = \pm \frac{1}{2}$ and $\nu = \pm \frac{1}{4}$ have been recently observed in monolayer graphene. We use a Chern-Simons description of multi-component…
Quantitative prediction of electronic properties in correlated materials requires simulations without empirical truncations and parameters. We present a method to achieve this goal through a new ab initio formulation of dynamical mean-field…
We present a model of inflation in which the inflaton field is charged under a triplet of $U(1)$ gauge fields. The model enjoys an internal $O(3)$ symmetry supporting the isotropic FRW solution. With an appropriate coupling between the…
We consider a magnetic impurity deposited on the surface of a strong topological insulator and interacting with the surface modes by a Kondo exchange interaction. Taking into account the warping of the Fermi line of the surface modes, we…
Quantum spin impurities coupled to superconductors are under intense investigation for their relevance to fundamental research as well as the prospects to engineer novel quantum phases of matter. Here we develop a large-$N$ mean-field…
B-gallium oxide (B-Ga2O3) is of high interest for power electronics because of its unique combination of melt growth, epitaxial growth, n-type dopability, ultrawide bandgap, and high critical field. Optimization of crystal growth processes…
The intrinsic iron(III) impurity center in polycrystalline lead titanate was investigated by means of high-frequency electron paramagnetic resonance (EPR) spectroscopy in order to determine the local-environment sensitive fine structure…
We theoretically study electronic states in graded-gap junctions of IV-VI compounds with band inversion. Using a two-band model within the ${\bf k}\cdot{\bf p}$ approximation and assuming that the gap and the gap centre present linear…
In this work, the changes in the energy of electrons and holes, oscillator strength and interband transition time when external fields are applied to a GaAs/AlGaAs semiconductor double ring grown by the droplet epitaxy technique are…
The deviation of the electron density around the nuclei from spherical symmetry determines the electric field gradient (EFG), which can be measured by various types of spectroscopy. Nuclear Quadrupole Resonance (NQR) is particularly…
We have theoretically studied the effect of an electric field on the energy levels of shallow donors and acceptors in silicon. An analysis of the electric field dependence of the lowest energy states in donors and acceptors is presented,…