Related papers: A spin field effect transistor for low leakage cur…
We compare and contrast magneto-transport oscillations in the fully quantum (single-electron coherent) and classical limits for a simple but illustrative model. In particular, we study the induced magnetization and spin current in a…
Spin current plays a central role in spintronics. In particular, finding more efficient ways to generate spin current has been an important issue and studied actively. For example, representative methods of spin current generation include…
In a nanomagnet (whose total spin S< 1000), very small polarized currents can lead to magnetic reversal. Treating on the same footing the transport and magnetic properties of a nanomagnet connected to magnetic leads via tunneling barriers,…
We fabricate planar all-graphene field-effect transistors with self-aligned side-gates at 100 nm from the main graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1V with conductance modulation of…
We examine a modified drift-diffusion formalism to describe spin transport near an ultrathin magnet whose thickness is similar to or less than the spin dephasing length. Most of the previous theories on spin torque assume the transverse…
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…
We provide a theoretical description of diffusive charge and spin transport in hybrid devices containing altermagnets. Based on recently derived drift--diffusion equations for coupled charge and spin dynamics and general boundary…
In the presence of spin-orbit interactions, the steady state established for spin distributions in an electric field is qualitatively different from the steady state for charge distributions. This is primarily because the steady state…
We present the first spintronic semiconductor field effect transistor. The injector and collector contacts of this device were made from magnetic permalloy thin films with different coercive fields so that they could be magnetized either…
We investigate spin relaxation in a silicon double quantum dot via leakage current through Pauli blockade as a function of interdot detuning and magnetic field. A dip in leakage current as a function of magnetic field on a \sim 40 mT field…
We propose a method for inducing magnetization reversal using an AC spin current polarized perpendicular to the equilibrium magnetization of the free magnetic layer. We show that the critical AC spin current is significantly smaller than…
Scheme and principle of operation of a spin gain transistor are proposed: a large unmagnetized current creates density sufficient for the ferromagnetic transition; a small magnetized current initiates spontaneous magnetization; large…
We study the effect of the spin-orbit interaction on heavy holes confined in a double quantum dot in the presence of a magnetic field of arbitrary direction. Rich physics arise as the two hole states of different spin are not only coupled…
Transport properties of ferromagnetic/non-magnetic/ferromagnetic single electron transistors are investigated as a function of external magnetic field, temperature, bias and gate voltage. By designing the magnetic electrodes to have…
A spin-polarized current with the polarization perpendicular to the plane of a vortex-state disk results in renormalization of the effective damping for a given magnetization mode, and the effective damping becomes zero if the current…
The spin precession in a cylindrical semiconductor nanowire due to Rashba spin-orbit coupling has been investigated theoretically using an InAs nanowire containing a surface two-dimensional electron gas as a model. The eigenstates,…
The spin-orbit (SO) interaction couples electron spin and momentum via a relativistic, effective magnetic field. While conveniently facilitating coherent spin manipulation in semiconductors, the SO interaction also inherently causes spin…
Understanding the magnetization dynamics induced by spin transfer torques in perpendicularly magnetized magnetic tunnel junction nanopillars and its dependence on material parameters is critical to optimizing device performance. Here we…
Magnetic skyrmions are of considerable interest for low-power memory and logic devices because of high speed at low current and high stability due to topological protection. We propose a skyrmion field-effect transistor based on a…
Processes that lead to the critical-current suppression and change of impedance of a superconductor under the application of an external voltage is an active area of research, especially due to various possible technological applications.…