Related papers: Strong electron correlation effects in non-volatil…
The book includes all main physical properties of d- and f-transition-metal systems and corresponding theoretical concepts. Especial attention is paid to the theory of magnetism and transport phenomena. Some examples of non-traditional…
Memristive circuit elements constitute a cornerstone for novel electronic applications, such as neuromorphic computing, called to revolutionize information technologies. By definition, memristors are sensitive to the history of electrical…
The goal of this paper is to highlight several issues which are most crucial for the understanding of the ``metal-insulator transition'' in two dimensions. We discuss some common problems in interpreting experimental results on high…
Cuprate superconductors are strongly sensitive materials to disorder and oxygen stoichiometry; even minute variations of those parameters drastically change their electronic properties. Here we exploit this characteristic to engineer a…
Accurate modeling of transition metal-containing compounds is of great interest due to their wide-ranging and significant applications. These systems present several challenges from an electronic structure perspective, including significant…
Functional oxides based resistive memories are recognized as potential candidate for the next-generation high density data storage and neuromorphic applications. Fundamental understanding of the compositional changes in the functional…
We have performed low-temperature transport measurements on a disordered two-dimensional electron system (2DES). Features of the strong localization leading to the quantum Hall effect are observed after the 2DES undergoes a direct…
The review of studies on memristive properties or effect of resistive switchings in four classes of high temperature superconductors is presented in order to reveal functional properties of HTSCs which become apparent in the effects under…
Adhesive interactions between elastic structures such as graphene sheets, carbon nanotubes, and microtubules have been shown to exhibit hysteresis due to irrecoverable energy loss associated with bond breakage, even in static…
We develop a time-dependent theory to investigate electron dynamics and photoionization processes of diatomic molecules interacting with strong laser fields including electron-electron correlation effects. We combine the recently formulated…
Strong electronic correlations can produce remarkable phenomena such as metal-insulator transitions and greatly enhance superconductivity, thermoelectricity, or optical non-linearity. In correlated systems, spatially varying charge textures…
Ferroelectric materials with switchable electric polarization hold great promise for a plethora of emergent applications, such as post-Moore's law nanoelectronics, beyond-Boltzmann transistors, non-volatile memories, and above-bandgap…
With the broad recent research on ferroelectric hafnium oxide for non-volatile memory technology, depolarization effects in HfO2-based ferroelectric devices gained a lot of interest. Understanding the physical mechanisms regulating the…
This article deals with dynamical systems depending on a slowly varying parameter. We present several physical examples illustrating memory effects, such as metastability and hysteresis, which frequently appear in these systems. A…
We report the fabrication and the electrical characterization of back-gated field effect transistors with black phosphorus channel. We show that the hysteresis of the transfer characteristic, due to intrinsic defects, can be exploited to…
We survey the current state of phase change memory (PCM), a non-volatile solid-state memory technology built around the large electrical contrast between the highly-resistive amorphous and highly-conductive crystalline states in so-called…
We investigate the electric field induced resistive switching effect and magnetic field induced fraction enlargement on a polycrystalline sample of a colossal magnetoresistive compound displaying intrinsic phase coexistence. Our data show…
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiO$_{\text{x}}$/Pt thin layer system.…
The fundamental property of most single-electron devices with quasicontinuous quasiparticle spectrum on the island is the periodicity of their transport characteristics in the gate voltage. This property is robust even with respect to…
In this theoretical study, we focus on the high-frequency response of the electrothermal NbO2-Mott threshold switch, a real-world electronic device, which has been proved to be relevant in several applications and is classified as a…