Related papers: Strong electron correlation effects in non-volatil…
Vertical structures of SiO$_{2}$ sandwiched between a top tungsten electrode and conducting non-metal substrate were fabricated by dry and wet etching methods. Both structures exhibit similar voltage-controlled memory behaviors, in which…
Non-volatile resistive switching, also known as memristor effect in two terminal devices, has emerged as one of the most important components in the ongoing development of high-density information storage, brain-inspired computing, and…
The possibility of in-memory computing with volatile memristive devices, namely, memristors requiring a power source to sustain their memory, is demonstrated. We have adopted a hysteretic graphene-based field emission structure as a…
Two-dimensional materials have been discovered to exhibit non-volatile resistive switching (NVRS) phenomenon. In our work, we reported the universal NVRS behavior in a dozen metal dichalcogenides, featuring low switching voltage, large…
Hysteretic gate responses of two-dimensional material heterostructures serve as sensitive probes of the underlying electronic states and hold significant promise for the development of novel nanoelectronic devices. Here we identify a new…
With the advent of increasingly elaborate experimental techniques in physics, chemistry and materials sciences, measured data are becoming bigger and more complex. The observables are typically a function of several stimuli resulting in…
This study provides new sets of experimental results supporting Westerlund's conjecture that Dead Matter Has Memory. Memory effects in the dynamic response of electric double-layer capacitors (EDLCs) that integrate its prior history of…
Electrical switching and rectifying properties of the metal-VO2-Si structures, on both p-type and n-type silicon, with vanadium dioxide films obtained by an acetylacetonate sol-gel method, are studied. The switching effect is shown to be…
Novel physics arises when strongly correlated system is driven out of equilibrium by external fields. Dramatic changes in physical properties, such as conductivity, are empirically observed in strongly correlated materials under high…
The choice that a solid system "makes" when adopting a crystal structure (stable or metastable) is ultimately governed by the interactions between electrons forming chemical bonds. By analyzing 6 prototypical binary transition-metal…
Transition-metal oxide films, demonstrating the effects of both threshold and nonvolatile memory resistive switching, have been recently proposed as candidate materials for storage-class memory. In this work we describe some experimental…
Under normal operations, memristive devices undergo variability in time and space and have internal dynamics. Interplay of memory and stochastic signal processing in memristive devices makes them candidates for performing bio-inspired tasks…
Hysteresis is a general phenomenon regularly observed in measurements of various materials properties such as magnetism, elasticity, capillary pressure, adsorption, battery voltage etc. Usually, the hysteretic behaviour is an intrinsic…
The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows…
Non-volatile multivalued memory effects caused by magnetic fields, currents, and voltage pulses are studied in Nd_{0.65}Ca_{0.35}MnO_3 and (Nd_{1-y}Sm_{y})_{0.5}Sr_{0.5}MnO_3 (y=0.75) single crystals in the hysteretic region between…
Nonlinearity is a crucial characteristic for implementing hardware security primitives or neuromorphic computing systems. The main feature of all memristive devices is this nonlinear behavior observed in their current-voltage…
There are certain classes of resistors, capacitors and inductors that, when subject to a periodic input of appropriate frequency, develop hysteresis loops in their characteristic response. Here, we show that the hysteresis of such memory…
The operation of a novel nonvolatile memory device based on a conductive ferroelectric/non-ferroelectric thin film multilayer stack is simulated numerically. The simulation involves the self-consistent steady state solution of Poisson's…
My research is dedicated to the electronic properties of functional oxides. My activity specifically focuses on ferroelectric tunnel junctions in which an ultrathin layer of ferroelectric material is intercalated between two metallic…
Ferroelectric memristors are intensively studied due to their potential implementation in data storage and processing devices. In this work we show that the memristive behavior of metal/ferroelectric oxide/metal devices relies on the…